Influence of different exchange correlation potentials on band structure and optical constant calculations of ZrGa2 and ZrGe2 single crystals
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12520%2F13%3A43885113" target="_blank" >RIV/60076658:12520/13:43885113 - isvavai.cz</a>
Výsledek na webu
<a href="http://www.sciencedirect.com/science/article/pii/S0927025613002280" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0927025613002280</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.commatsci.2013.04.056" target="_blank" >10.1016/j.commatsci.2013.04.056</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Influence of different exchange correlation potentials on band structure and optical constant calculations of ZrGa2 and ZrGe2 single crystals
Popis výsledku v původním jazyce
The all-electron full potential linearized augmented plane wave method was used to solve the Kohn Sham DFT equations. We have employed different approximations for the exchange correlation potentials, namely: LDA, GGA and EVGGA, and insignificant effecton the band structure and the density of states were found. Calculations show that there is a significant difference in the band dispersion with replacement of Ga by Ge that is attributed to the fact that in the ZrGe2 compound Zr atom is situated at 4c site and two Ge atoms are situated at 4c site. Whereas for ZrGa2 compound Zr is located at 4g site and the three Ga atoms are situated at 4h, 2c and 2a sites, respectively. There exists strong hybridization between the states. Moving from ZrGa2 to ZrGe2 has significant influence on the magnitudes and the peak positions of states. The optical properties of the two compounds were studied and analyzed.
Název v anglickém jazyce
Influence of different exchange correlation potentials on band structure and optical constant calculations of ZrGa2 and ZrGe2 single crystals
Popis výsledku anglicky
The all-electron full potential linearized augmented plane wave method was used to solve the Kohn Sham DFT equations. We have employed different approximations for the exchange correlation potentials, namely: LDA, GGA and EVGGA, and insignificant effecton the band structure and the density of states were found. Calculations show that there is a significant difference in the band dispersion with replacement of Ga by Ge that is attributed to the fact that in the ZrGe2 compound Zr atom is situated at 4c site and two Ge atoms are situated at 4c site. Whereas for ZrGa2 compound Zr is located at 4g site and the three Ga atoms are situated at 4h, 2c and 2a sites, respectively. There exists strong hybridization between the states. Moving from ZrGa2 to ZrGe2 has significant influence on the magnitudes and the peak positions of states. The optical properties of the two compounds were studied and analyzed.
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BH - Optika, masery a lasery
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/ED2.1.00%2F01.0024" target="_blank" >ED2.1.00/01.0024: Jihočeské výzkumné centrum akvakultury a biodiverzity hydrocenóz</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2013
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Computational Materials Science
ISSN
0927-0256
e-ISSN
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Svazek periodika
78
Číslo periodika v rámci svazku
Neuveden
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
6
Strana od-do
134-139
Kód UT WoS článku
000321698700020
EID výsledku v databázi Scopus
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