Elastic, electronic and optical properties of cubic antiperovskites SbNCa3 and BiNCa3
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12640%2F09%3A00010008" target="_blank" >RIV/60076658:12640/09:00010008 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/67179843:_____/09:00342927
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Elastic, electronic and optical properties of cubic antiperovskites SbNCa3 and BiNCa3
Popis výsledku v původním jazyce
The structural, elastic, electronic and optical properties of ANCa(3) (A = Sb and Bi) compounds with the cubic antiperovskite structure have been investigated using a full relativistic version of the full-potential augmented plane-wave plus local orbitals method based on the density functional theory, in conjunction with both the local density approximation and the generalized gradient approximation (GGA). For reliable description of energy band gap values, another form of GGA developed by Engel and Vosko (GGA-EV) has been applied. The calculated structural properties, namely equilibrium lattice constant, bulk modulus and its first-order pressure derivative, are in good agreement with the available theoretical and experimental results. We have determined the full set of first-order elastic constants, shear modulus, Young's modulus, Poisson's ratio and Debye temperature of these compounds. Band structures reveal that these compounds are direct energy band gap semiconductors. The analysi
Název v anglickém jazyce
Elastic, electronic and optical properties of cubic antiperovskites SbNCa3 and BiNCa3
Popis výsledku anglicky
The structural, elastic, electronic and optical properties of ANCa(3) (A = Sb and Bi) compounds with the cubic antiperovskite structure have been investigated using a full relativistic version of the full-potential augmented plane-wave plus local orbitals method based on the density functional theory, in conjunction with both the local density approximation and the generalized gradient approximation (GGA). For reliable description of energy band gap values, another form of GGA developed by Engel and Vosko (GGA-EV) has been applied. The calculated structural properties, namely equilibrium lattice constant, bulk modulus and its first-order pressure derivative, are in good agreement with the available theoretical and experimental results. We have determined the full set of first-order elastic constants, shear modulus, Young's modulus, Poisson's ratio and Debye temperature of these compounds. Band structures reveal that these compounds are direct energy band gap semiconductors. The analysi
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BO - Biofyzika
OECD FORD obor
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Návaznosti výsledku
Projekt
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Návaznosti
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju
Ostatní
Rok uplatnění
2009
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Computational Materials Science
ISSN
0927-0256
e-ISSN
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Svazek periodika
46
Číslo periodika v rámci svazku
4
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
7
Strana od-do
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Kód UT WoS článku
000271024000036
EID výsledku v databázi Scopus
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