Temperature changes of I-V characteristics of PV cells as consequence of the Fermi energy level shift

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60460709%3A41310%2F17%3A72329" target="_blank" >RIV/60460709:41310/17:72329 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.17221/38/2015-RAE" target="_blank" >http://dx.doi.org/10.17221/38/2015-RAE</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.17221/38/2015-RAE" target="_blank" >10.17221/38/2015-RAE</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature changes of I-V characteristics of PV cells as consequence of the Fermi energy level shift

Popis výsledku v původním jazyce

I-V characteristic of illuminated PV cell varies with temperature changes. The effect is explained according to the solid state theory. The higher temperature, the lower open-circuit voltage and the higher short-circuit current. This behavior is explained on the basis of band theory of the solid state physics. The increasing temperature causes a narrowing of the forbidden gap and a shift of the Fermi energy level toward the center of the forbidden gap. These both effects lead to a reduction of the potential barrier in the band diagram of the illuminated PN junction, thus to decrease of the photovoltaic voltage. In addition, the narrowing of the forbidden gap causes higher generation of electron-hole pairs in the illuminated PN junction and short-circuit current increases.

Název v anglickém jazyce

Temperature changes of I-V characteristics of PV cells as consequence of the Fermi energy level shift

Popis výsledku anglicky

I-V characteristic of illuminated PV cell varies with temperature changes. The effect is explained according to the solid state theory. The higher temperature, the lower open-circuit voltage and the higher short-circuit current. This behavior is explained on the basis of band theory of the solid state physics. The increasing temperature causes a narrowing of the forbidden gap and a shift of the Fermi energy level toward the center of the forbidden gap. These both effects lead to a reduction of the potential barrier in the band diagram of the illuminated PN junction, thus to decrease of the photovoltaic voltage. In addition, the narrowing of the forbidden gap causes higher generation of electron-hole pairs in the illuminated PN junction and short-circuit current increases.

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

20704 - Energy and fuels

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Research in Agricultural Engineering (Zemědělská technika)

ISSN

1212-9151

e-ISSN

—

Svazek periodika

63

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

6

Strana od-do

10-15

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-85018669494