Capacitance of p?and n?Doped Graphenes is Dominated by Structural Defects Regardless of the Dopant Type

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F14%3A43897468" target="_blank" >RIV/60461373:22310/14:43897468 - isvavai.cz</a>

Výsledek na webu

<a href="http://onlinelibrary.wiley.com/doi/10.1002/cssc.201400013/full" target="_blank" >http://onlinelibrary.wiley.com/doi/10.1002/cssc.201400013/full</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/cssc.201400013" target="_blank" >10.1002/cssc.201400013</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Capacitance of p?and n?Doped Graphenes is Dominated by Structural Defects Regardless of the Dopant Type

Popis výsledku v původním jazyce

Graphene materials possess attractive properties that can be used for the fabrication of supercapacitors with enhanced energy-storage performance. It has been shown that both boron and nitrogen doping of graphene can improve the intrinsic capacitance ofthe material relative to the undoped precursor. We address the question of whether p-doping (using boron as dopant) or n-doping (using nitrogen as dopant) leads to increased capacitance relative to undoped graphene materials. Using thermal exfoliation wesynthesized both boron- and nitrogen-doped graphene materials and measured capacitance relative to the undoped material. After a full characterization by SEM analysis, X-ray photoelectron spectroscopy, Raman spectroscopy, gamma-ray activation analysis,Brunauer-Emmett-Teller analysis, and electrochemical techniques we demonstrate that the doping process does not lead to enhancement of capacitive behavior and that the main characteristic influencing capacitance is the presence of structu

Název v anglickém jazyce

Capacitance of p?and n?Doped Graphenes is Dominated by Structural Defects Regardless of the Dopant Type

Popis výsledku anglicky

Graphene materials possess attractive properties that can be used for the fabrication of supercapacitors with enhanced energy-storage performance. It has been shown that both boron and nitrogen doping of graphene can improve the intrinsic capacitance ofthe material relative to the undoped precursor. We address the question of whether p-doping (using boron as dopant) or n-doping (using nitrogen as dopant) leads to increased capacitance relative to undoped graphene materials. Using thermal exfoliation wesynthesized both boron- and nitrogen-doped graphene materials and measured capacitance relative to the undoped material. After a full characterization by SEM analysis, X-ray photoelectron spectroscopy, Raman spectroscopy, gamma-ray activation analysis,Brunauer-Emmett-Teller analysis, and electrochemical techniques we demonstrate that the doping process does not lead to enhancement of capacitive behavior and that the main characteristic influencing capacitance is the presence of structu

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ChemSusChem

ISSN

1864-5631

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

5

Strana od-do

1102-1106

Kód UT WoS článku

000333754200018

EID výsledku v databázi Scopus

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