Photo-electrochemical properties of WO3 and alpha-Fe2O3 thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F14%3A43898482" target="_blank" >RIV/60461373:22310/14:43898482 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.aidic.it/cet/14/41/064.pdf" target="_blank" >http://www.aidic.it/cet/14/41/064.pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3303/CET1441064" target="_blank" >10.3303/CET1441064</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Photo-electrochemical properties of WO3 and alpha-Fe2O3 thin films

Popis výsledku v původním jazyce

Iron oxide (alpha-Fe2O3) in hematite crystalline structure and tungsten trioxide have recently attracted much attention as possibly convenient materials to be used for hydrogen production via photoelectrochemical water splitting. Thius is due to their favorable properties such as band gaps between 2.0 - 2.2 eV (alpha-Fe2O3) and 2.5-2.8 eV (WO3) which allows absorbing of a substantial fraction of solar spectrum. FTO glass substrates were used for both types of films. Tungsten trioxide films were preparedby sedimentation of WO3 particles and further annealing at different temperatures to improve adhesion. Iron oxide (alpha-Fe2O3) hematite films were prepared by advanced pulsed plasma deposition method of High Power Impulse Magnetron Sputtering (HiPIMS).The films were evaluated on the basis of physical properties such as crystalline structure, surface topography and electrical behavior. The functional properties were investigated under simulated photoelectrochemical (PEC) water splittin

Název v anglickém jazyce

Photo-electrochemical properties of WO3 and alpha-Fe2O3 thin films

Popis výsledku anglicky

Iron oxide (alpha-Fe2O3) in hematite crystalline structure and tungsten trioxide have recently attracted much attention as possibly convenient materials to be used for hydrogen production via photoelectrochemical water splitting. Thius is due to their favorable properties such as band gaps between 2.0 - 2.2 eV (alpha-Fe2O3) and 2.5-2.8 eV (WO3) which allows absorbing of a substantial fraction of solar spectrum. FTO glass substrates were used for both types of films. Tungsten trioxide films were preparedby sedimentation of WO3 particles and further annealing at different temperatures to improve adhesion. Iron oxide (alpha-Fe2O3) hematite films were prepared by advanced pulsed plasma deposition method of High Power Impulse Magnetron Sputtering (HiPIMS).The films were evaluated on the basis of physical properties such as crystalline structure, surface topography and electrical behavior. The functional properties were investigated under simulated photoelectrochemical (PEC) water splittin

Druh

D - Stať ve sborníku

CEP obor

CG - Elektrochemie

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP108%2F12%2F2104" target="_blank" >GAP108/12/2104: Pokročilé polovodičové materiály pro fotoelektrochemický rozklad vody</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Chemical Engineering Transactions

ISBN

978-88-95608-32-7

ISSN

2283-9216

e-ISSN

—

Počet stran výsledku

6

Strana od-do

379-384

Název nakladatele

AIDIC Servizi

Místo vydání

Milano

Místo konání akce

Chia

Datum konání akce

28. 9. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000346539800064