Toxicity of layered semiconductor chalcogenides: beware of interferences

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43899690" target="_blank" >RIV/60461373:22310/15:43899690 - isvavai.cz</a>

Výsledek na webu

<a href="http://pubs.rsc.org/en/content/articlehtml/2015/ra/c5ra09404f" target="_blank" >http://pubs.rsc.org/en/content/articlehtml/2015/ra/c5ra09404f</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c5ra09404f" target="_blank" >10.1039/c5ra09404f</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Toxicity of layered semiconductor chalcogenides: beware of interferences

Popis výsledku v původním jazyce

The absence of bandgap in graphene has opened exploration in a new class of 2D nanomaterials: layered semiconductor chalcogenides. Research has found that they have promising properties which are advantageous for applications in a wide range of fields such as solar energy conversion, field effect transistors, optoelectronic devices, energy storage, and is expanding into biomedical applications. However, little is known about their toxicity effects. In view of the possibility of employing these materialsinto consumer products, we investigated the cytotoxicity of two common layered semiconductor chalcogenides, namely GaSe and GeS, based on cell viability assessments using water-soluble tetrazolium salt (WST-8) and methyl-thiazolyldiphenyl-tetrazolium bromide (MTT) assays after a 24 h exposure to varying concentrations of the nanomaterials on human lung carcinoma epithelial cells (A549). The cytotoxicity results indicated that GaSe is relatively more toxic than another group of 2D layere

Název v anglickém jazyce

Toxicity of layered semiconductor chalcogenides: beware of interferences

Popis výsledku anglicky

The absence of bandgap in graphene has opened exploration in a new class of 2D nanomaterials: layered semiconductor chalcogenides. Research has found that they have promising properties which are advantageous for applications in a wide range of fields such as solar energy conversion, field effect transistors, optoelectronic devices, energy storage, and is expanding into biomedical applications. However, little is known about their toxicity effects. In view of the possibility of employing these materialsinto consumer products, we investigated the cytotoxicity of two common layered semiconductor chalcogenides, namely GaSe and GeS, based on cell viability assessments using water-soluble tetrazolium salt (WST-8) and methyl-thiazolyldiphenyl-tetrazolium bromide (MTT) assays after a 24 h exposure to varying concentrations of the nanomaterials on human lung carcinoma epithelial cells (A549). The cytotoxicity results indicated that GaSe is relatively more toxic than another group of 2D layere

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/GA15-07912S" target="_blank" >GA15-07912S: Nové 2D vrstevnaté chalkogenidové tenké vrstvy a 3D nanostruktury: Syntéza a charakterizace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

RSC Advances

ISSN

2046-2069

e-ISSN

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Svazek periodika

5

Číslo periodika v rámci svazku

83

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

67485-67492

Kód UT WoS článku

000359537000015

EID výsledku v databázi Scopus

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