Anti-MoS2 Nanostructures: Tl2S and Its Electrochemical and Electronic Properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43899792" target="_blank" >RIV/60461373:22310/15:43899792 - isvavai.cz</a>

Výsledek na webu

<a href="http://pubs.acs.org/doi/pdf/10.1021/acsnano.5b05157" target="_blank" >http://pubs.acs.org/doi/pdf/10.1021/acsnano.5b05157</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsnano.5b05157" target="_blank" >10.1021/acsnano.5b05157</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Anti-MoS2 Nanostructures: Tl2S and Its Electrochemical and Electronic Properties

Popis výsledku v původním jazyce

Layered transition metal dichalcogenides are catalytically important compounds. Unlike the mounting interest in transition metal dichalcogenides such as MoS2 and WS2 for electrochemical applications, other metal chalcogenides with layered structure but different chemical composition have received little attention among the scientific community. One such example is represented by thallium(I) sulfide (Tl2S), a Group 13 chalcogenide, which adopts the peculiar anti-CdCl2 type structure where the chalcogen is sandwiched between the metal layers. This is the exact opposite of a number of transition metal dichalcogenides like 1T-MoS2 adopting the regular CdCl2 structure type. The electronic structure of Tl2S thus differs from MoS2. Such structure may providea useful insight and understanding toward its electrochemical behavior in relation to the electrochemical properties of MoS2. We thus investigated the intrinsic electroactivity of Tl2S and its implications for sensing and energy generatio

Název v anglickém jazyce

Anti-MoS2 Nanostructures: Tl2S and Its Electrochemical and Electronic Properties

Popis výsledku anglicky

Layered transition metal dichalcogenides are catalytically important compounds. Unlike the mounting interest in transition metal dichalcogenides such as MoS2 and WS2 for electrochemical applications, other metal chalcogenides with layered structure but different chemical composition have received little attention among the scientific community. One such example is represented by thallium(I) sulfide (Tl2S), a Group 13 chalcogenide, which adopts the peculiar anti-CdCl2 type structure where the chalcogen is sandwiched between the metal layers. This is the exact opposite of a number of transition metal dichalcogenides like 1T-MoS2 adopting the regular CdCl2 structure type. The electronic structure of Tl2S thus differs from MoS2. Such structure may providea useful insight and understanding toward its electrochemical behavior in relation to the electrochemical properties of MoS2. We thus investigated the intrinsic electroactivity of Tl2S and its implications for sensing and energy generatio

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/GA15-07912S" target="_blank" >GA15-07912S: Nové 2D vrstevnaté chalkogenidové tenké vrstvy a 3D nanostruktury: Syntéza a charakterizace</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Nano

ISSN

1936-0851

e-ISSN

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Svazek periodika

10

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

12

Strana od-do

112-23

Kód UT WoS článku

000369115800010

EID výsledku v databázi Scopus

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