Nonconductive layered hexagonal boron nitride exfoliation by bipolar electrochemistry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43915706" target="_blank" >RIV/60461373:22310/18:43915706 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.rsc.org/en/content/articlepdf/2018/nr/c8nr00082d" target="_blank" >https://pubs.rsc.org/en/content/articlepdf/2018/nr/c8nr00082d</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c8nr00082d" target="_blank" >10.1039/c8nr00082d</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nonconductive layered hexagonal boron nitride exfoliation by bipolar electrochemistry

Popis výsledku v původním jazyce

Boron nitride (h-BN), which is an isoelectronic analogue of graphite, has received immense attention due to its unique physical and chemical properties. Numerous methods have been developed to isolate few-layered h-BN nanosheets. These include chemical vapour deposition, solution-based exfoliation and ball-milling amongst others. The bipolar electrochemical method is one of the popular, scalable and water based exfoliation methods which has been applied to graphite, layered transition metal dichalcogenides and black phosphorus. This method was not applied to insulators as this has been assumed to be an impossible task. In this study, we report a solution-based, scalable and time efficient bipolar electrochemical method for the direct exfoliation of bulk insulator, layered h-BN into few-layered h-BN nanosheets based on bipolar electrochemistry. The electrochemical exfoliation of nonconductive materials, h-BN, opens the way to the application of this scalable method to the whole spectrum of non-conductive layered materials. This facile method offers an alternative platform for h-BN electrochemical exfoliation in wide-ranging fields encompassing electronics and biomedical science.

Název v anglickém jazyce

Nonconductive layered hexagonal boron nitride exfoliation by bipolar electrochemistry

Popis výsledku anglicky

Boron nitride (h-BN), which is an isoelectronic analogue of graphite, has received immense attention due to its unique physical and chemical properties. Numerous methods have been developed to isolate few-layered h-BN nanosheets. These include chemical vapour deposition, solution-based exfoliation and ball-milling amongst others. The bipolar electrochemical method is one of the popular, scalable and water based exfoliation methods which has been applied to graphite, layered transition metal dichalcogenides and black phosphorus. This method was not applied to insulators as this has been assumed to be an impossible task. In this study, we report a solution-based, scalable and time efficient bipolar electrochemical method for the direct exfoliation of bulk insulator, layered h-BN into few-layered h-BN nanosheets based on bipolar electrochemistry. The electrochemical exfoliation of nonconductive materials, h-BN, opens the way to the application of this scalable method to the whole spectrum of non-conductive layered materials. This facile method offers an alternative platform for h-BN electrochemical exfoliation in wide-ranging fields encompassing electronics and biomedical science.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/GA16-05167S" target="_blank" >GA16-05167S: Použití iontových svazků pro modifikace struktur založených na grafenu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanoscale

ISSN

2040-3364

e-ISSN

—

Svazek periodika

10

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

7298-7303

Kód UT WoS článku

000430537200058

EID výsledku v databázi Scopus

2-s2.0-85045856522