In Situ Doping of Black Phosphorus by High-Pressure Synthesis

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F19%3A43918130" target="_blank" >RIV/60461373:22310/19:43918130 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.9b01398" target="_blank" >https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.9b01398</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.inorgchem.9b01398" target="_blank" >10.1021/acs.inorgchem.9b01398</a>

Jazyk výsledku

angličtina

Název v původním jazyce

In Situ Doping of Black Phosphorus by High-Pressure Synthesis

Popis výsledku v původním jazyce

Black phosphorus is a two-dimensional semiconductor with promising properties for catalysis, energy storage, and conversion as well as electronic device applications, and control of its electronic structure is critical for such applications. Substitutional doping of phosphorus by electron donating (e.g., sulfur) or electron accepting elements (e.g., germanium) can significantly change its properties, especially charge carrier concentration. Here, we report the in situ doping of black phosphorus by its direct synthesis from a mixture of red phosphorus and a dopant by high pressure synthesis. In detail, we study the incorporation of germanium, sulfur, selenium, and tellurium within black phosphorus, showing significant differences in incorporation of individual elements and assess their suitability for potential electrochemical applications.

Název v anglickém jazyce

In Situ Doping of Black Phosphorus by High-Pressure Synthesis

Popis výsledku anglicky

Black phosphorus is a two-dimensional semiconductor with promising properties for catalysis, energy storage, and conversion as well as electronic device applications, and control of its electronic structure is critical for such applications. Substitutional doping of phosphorus by electron donating (e.g., sulfur) or electron accepting elements (e.g., germanium) can significantly change its properties, especially charge carrier concentration. Here, we report the in situ doping of black phosphorus by its direct synthesis from a mixture of red phosphorus and a dopant by high pressure synthesis. In detail, we study the incorporation of germanium, sulfur, selenium, and tellurium within black phosphorus, showing significant differences in incorporation of individual elements and assess their suitability for potential electrochemical applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/GX19-26910X" target="_blank" >GX19-26910X: Chemie ve dvou dimenzích - za hranice grafenu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Inorganic Chemistry

ISSN

0020-1669

e-ISSN

—

Svazek periodika

58

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

12

Strana od-do

10227-10238

Kód UT WoS článku

000480371400079

EID výsledku v databázi Scopus

2-s2.0-85070682033