Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F20%3A43921771" target="_blank" >RIV/60461373:22310/20:43921771 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/20:00536509 RIV/00216224:14740/20:00117384 RIV/44555601:13440/20:43895718 RIV/00216208:11320/20:10417842

Výsledek na webu

<a href="https://pubs.rsc.org/en/content/articlelanding/2020/CP/D0CP04119J#!divAbstract" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2020/CP/D0CP04119J#!divAbstract</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d0cp04119j" target="_blank" >10.1039/d0cp04119j</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions

Popis výsledku v původním jazyce

Noble metal nanoparticles dispersed in semiconductors, mainly in ZnO, have been intensively investigated. Au dispersion and possible precipitation as well as damage growth were studied in ZnO of various orientations, a-plane (1120) and c-plane (0001), using 1 MeV Au+-ion implantation with an ion fluence of 1.5 x 10(16) cm(-2) and subsequently annealed at 600 degrees C in an ambient atmosphere for one hour. Afterwards, irradiation with 10 MeV O3+ at a fluence of 5 x 10(14) cm(-2) was used to modify Au distribution and internal morphology as well as to follow the structural modification of ZnO under high-energy light-ion irradiation. Rutherford backscattering spectrometry in the channelling mode (RBS-C) and Raman spectroscopy show that O irradiation with high electronic energy transfer distinctly modifies the implanted Au layer in various ZnO facets; it introduces additional displacement and disorder in the O sublattice mainly in the a-plane while not creating an additional strain in this facet. This has been confirmed by XRD analysis, identifying the appearance of an additional phase (nanocrystallites) after Au implantation, which diminishes after O irradiation, and RBS-C has identified decreased disorder in the Zn-sublattice. Unlike in c-plane ZnO, it has been possible to observe a local compressive deformation around spherical defects, which is more pronounced after O irradiation simultaneously with the vertical strain introduced in the Au-implanted and annealed layer. Transmission electron microscopy (TEM) with energy dispersive spectroscopy (EDS) was employed to investigate the interior morphology, showing the occurrence of Au-hcp clusters of the small sizes of about 4-10 nm; neither the cluster sizes nor their shapes are significantly affected by the O irradiation.

Název v anglickém jazyce

Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions

Popis výsledku anglicky

Noble metal nanoparticles dispersed in semiconductors, mainly in ZnO, have been intensively investigated. Au dispersion and possible precipitation as well as damage growth were studied in ZnO of various orientations, a-plane (1120) and c-plane (0001), using 1 MeV Au+-ion implantation with an ion fluence of 1.5 x 10(16) cm(-2) and subsequently annealed at 600 degrees C in an ambient atmosphere for one hour. Afterwards, irradiation with 10 MeV O3+ at a fluence of 5 x 10(14) cm(-2) was used to modify Au distribution and internal morphology as well as to follow the structural modification of ZnO under high-energy light-ion irradiation. Rutherford backscattering spectrometry in the channelling mode (RBS-C) and Raman spectroscopy show that O irradiation with high electronic energy transfer distinctly modifies the implanted Au layer in various ZnO facets; it introduces additional displacement and disorder in the O sublattice mainly in the a-plane while not creating an additional strain in this facet. This has been confirmed by XRD analysis, identifying the appearance of an additional phase (nanocrystallites) after Au implantation, which diminishes after O irradiation, and RBS-C has identified decreased disorder in the Zn-sublattice. Unlike in c-plane ZnO, it has been possible to observe a local compressive deformation around spherical defects, which is more pronounced after O irradiation simultaneously with the vertical strain introduced in the Au-implanted and annealed layer. Transmission electron microscopy (TEM) with energy dispersive spectroscopy (EDS) was employed to investigate the interior morphology, showing the occurrence of Au-hcp clusters of the small sizes of about 4-10 nm; neither the cluster sizes nor their shapes are significantly affected by the O irradiation.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Chemistry Chemical Physics

ISSN

1463-9076

e-ISSN

—

Svazek periodika

22

Číslo periodika v rámci svazku

41

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

23563-23573

Kód UT WoS článku

000582937400008

EID výsledku v databázi Scopus

2-s2.0-85094932404