Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F24%3A43931483" target="_blank" >RIV/60461373:22310/24:43931483 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/full/10.1021/acsnano.4c09745" target="_blank" >https://pubs.acs.org/doi/full/10.1021/acsnano.4c09745</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsnano.4c09745" target="_blank" >10.1021/acsnano.4c09745</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces

Popis výsledku v původním jazyce

Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximizing their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (mu(Net)) as close as possible to that of individual nanosheets (mu(NS)). In practice, the presence of internanosheet junctions generally limits electronic conduction, such that the ratio of junction resistance (R-J) to nanosheet resistance (R-NS), determines the network mobility via mu(NS)/mu(Net) approximate to R-J/R-NS + 1. Hence, achieving R-J/R-NS &lt; 1 is a crucial step for implementation of 2D materials in printed electronics applications. In this work, we utilize an advanced liquid-interface deposition process to maximize nanosheet alignment and network uniformity, thus reducing R-J. We demonstrate the approach using graphene and MoS2 as model materials, achieving low RJ/RNS values of 0.5 and 0.2, respectively. The resultant graphene networks show a high conductivity of sigma(Net) = 5 x 10(4) S/m while our semiconducting MoS2 networks demonstrate record mobility of mu(Net) = 30 cm(2)/(V s), both at extremely low network thickness (t(Net) &lt; 10 nm). Finally, we show that the deposition process is compatible with nonlayered quasi-2D materials such as silver nanosheets (AgNS), achieving network conductivity close to bulk silver for networks &lt;100 nm-thick.

Název v anglickém jazyce

Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces

Popis výsledku anglicky

Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximizing their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (mu(Net)) as close as possible to that of individual nanosheets (mu(NS)). In practice, the presence of internanosheet junctions generally limits electronic conduction, such that the ratio of junction resistance (R-J) to nanosheet resistance (R-NS), determines the network mobility via mu(NS)/mu(Net) approximate to R-J/R-NS + 1. Hence, achieving R-J/R-NS &lt; 1 is a crucial step for implementation of 2D materials in printed electronics applications. In this work, we utilize an advanced liquid-interface deposition process to maximize nanosheet alignment and network uniformity, thus reducing R-J. We demonstrate the approach using graphene and MoS2 as model materials, achieving low RJ/RNS values of 0.5 and 0.2, respectively. The resultant graphene networks show a high conductivity of sigma(Net) = 5 x 10(4) S/m while our semiconducting MoS2 networks demonstrate record mobility of mu(Net) = 30 cm(2)/(V s), both at extremely low network thickness (t(Net) &lt; 10 nm). Finally, we show that the deposition process is compatible with nonlayered quasi-2D materials such as silver nanosheets (AgNS), achieving network conductivity close to bulk silver for networks &lt;100 nm-thick.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Nano

ISSN

1936-0851

e-ISSN

1936-086X

Svazek periodika

18

Číslo periodika v rámci svazku

47

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

32589-32601

Kód UT WoS článku

001376459300001

EID výsledku v databázi Scopus

2-s2.0-85211392958