A photodetector based on the non-centrosymmetric 2D pseudo-binary chalcogenide MnIn2Se4
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932168" target="_blank" >RIV/60461373:22310/25:43932168 - isvavai.cz</a>
Výsledek na webu
<a href="https://pubs.rsc.org/en/content/articlehtml/2025/tc/d4tc04380d" target="_blank" >https://pubs.rsc.org/en/content/articlehtml/2025/tc/d4tc04380d</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d4tc04380d" target="_blank" >10.1039/d4tc04380d</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
A photodetector based on the non-centrosymmetric 2D pseudo-binary chalcogenide MnIn2Se4
Popis výsledku v původním jazyce
Due to their attractive band gap properties and van der Waals structure, 2D binary chalcogenide materials have been widely investigated in the last decade, finding applications in several fields such as catalysis, spintronics, and optoelectronics. Ternary 2D chalcogenide materials are a subject of growing interest in materials science due to their superior chemical tunability which endows tailored properties to the devices prepared thereof. In the family of AIIBIII2XVI4, ordered ZnIn2S4-like based photocatalytic systems have been studied meticulously. In contrast, reports on disordered phases appear to a minor extent. Herein, a photoelectrochemical (PEC) detector based on the pseudo-binary MnIn2Se4 system is presented. A combination of optical measurements and DFT calculations confirmed that the nature of the bandgap in MnIn2Se4 is indirect. Its performance outclasses that of parent compounds, reaching responsivity values of 8.41 mA W-1. The role of the non-centrosymmetric crystal structure is briefly discussed as a possible cause of improved charge separation of the photogenerated charge carriers.
Název v anglickém jazyce
A photodetector based on the non-centrosymmetric 2D pseudo-binary chalcogenide MnIn2Se4
Popis výsledku anglicky
Due to their attractive band gap properties and van der Waals structure, 2D binary chalcogenide materials have been widely investigated in the last decade, finding applications in several fields such as catalysis, spintronics, and optoelectronics. Ternary 2D chalcogenide materials are a subject of growing interest in materials science due to their superior chemical tunability which endows tailored properties to the devices prepared thereof. In the family of AIIBIII2XVI4, ordered ZnIn2S4-like based photocatalytic systems have been studied meticulously. In contrast, reports on disordered phases appear to a minor extent. Herein, a photoelectrochemical (PEC) detector based on the pseudo-binary MnIn2Se4 system is presented. A combination of optical measurements and DFT calculations confirmed that the nature of the bandgap in MnIn2Se4 is indirect. Its performance outclasses that of parent compounds, reaching responsivity values of 8.41 mA W-1. The role of the non-centrosymmetric crystal structure is briefly discussed as a possible cause of improved charge separation of the photogenerated charge carriers.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2025
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Materials Chemistry C
ISSN
2050-7526
e-ISSN
2050-7534
Svazek periodika
13
Číslo periodika v rámci svazku
10
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
14
Strana od-do
5356-5369
Kód UT WoS článku
001409870200001
EID výsledku v databázi Scopus
2-s2.0-86000765024