Dynamic Interplay of Nonlocal Recombination Pathways in Quantum Emitters in Hexagonal Boron Nitride

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932187" target="_blank" >RIV/60461373:22310/25:43932187 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/full/10.1021/acs.jpcc.4c07147" target="_blank" >https://pubs.acs.org/doi/full/10.1021/acs.jpcc.4c07147</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.4c07147" target="_blank" >10.1021/acs.jpcc.4c07147</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Dynamic Interplay of Nonlocal Recombination Pathways in Quantum Emitters in Hexagonal Boron Nitride

Popis výsledku v původním jazyce

Optically active defects in wide bandgap materials play a central role in several emerging applications in quantum information and sensing as they allow for manipulating and harvesting the internal degrees of freedom of single electrons with optical means. Interactions among defect states and with the surrounding environment represent a crucial feature for sensing but can severely hamper the coherence of the quantum states and prevent an efficient integration with photonic architectures due to unpredictable spectral instability. Understanding and controlling defect interactions would mitigate the effects of spectral instabilities and enable quantum applications based on long-range interactions. Here, we investigate the photoluminescence spectral dynamics of quantum emitters in defective hexagonal boron nitride (hBN), a material whose emission spectrum notoriously displays spectral wandering and diffusion, and we identify several optical transitions with discrete energy jumps. We associate the spectral jumps with the interplay amid competing recombination pathways available to the defect states in a process like donor-acceptor-pairs (DAP). The discrete spectral jumps observed in the emission spectrum of hBN arise from interactions between the harmonic states of nitrogen pi orbitals of delocalized defects, and their energies can be ascribed to a DAP-like transition sequence. Our results allow mapping of the defect geometry in an hBN lattice, setting the basis for mitigating the effects of spectral jumping in this platform and paving the way toward using the long-range interaction of defect ensembles for quantum technology.

Název v anglickém jazyce

Dynamic Interplay of Nonlocal Recombination Pathways in Quantum Emitters in Hexagonal Boron Nitride

Popis výsledku anglicky

Optically active defects in wide bandgap materials play a central role in several emerging applications in quantum information and sensing as they allow for manipulating and harvesting the internal degrees of freedom of single electrons with optical means. Interactions among defect states and with the surrounding environment represent a crucial feature for sensing but can severely hamper the coherence of the quantum states and prevent an efficient integration with photonic architectures due to unpredictable spectral instability. Understanding and controlling defect interactions would mitigate the effects of spectral instabilities and enable quantum applications based on long-range interactions. Here, we investigate the photoluminescence spectral dynamics of quantum emitters in defective hexagonal boron nitride (hBN), a material whose emission spectrum notoriously displays spectral wandering and diffusion, and we identify several optical transitions with discrete energy jumps. We associate the spectral jumps with the interplay amid competing recombination pathways available to the defect states in a process like donor-acceptor-pairs (DAP). The discrete spectral jumps observed in the emission spectrum of hBN arise from interactions between the harmonic states of nitrogen pi orbitals of delocalized defects, and their energies can be ascribed to a DAP-like transition sequence. Our results allow mapping of the defect geometry in an hBN lattice, setting the basis for mitigating the effects of spectral jumping in this platform and paving the way toward using the long-range interaction of defect ensembles for quantum technology.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

1932-7455

Svazek periodika

129

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

2044-2053

Kód UT WoS článku

001397639100001

EID výsledku v databázi Scopus

2-s2.0-85215368070