Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22340%2F16%3A43902517" target="_blank" >RIV/60461373:22340/16:43902517 - isvavai.cz</a>

Výsledek na webu

<a href="http://onlinelibrary.wiley.com/doi/10.1002/chem.201604190/abstract;jsessionid=5763400065D0D73879217D80B528708F.f02t02" target="_blank" >http://onlinelibrary.wiley.com/doi/10.1002/chem.201604190/abstract;jsessionid=5763400065D0D73879217D80B528708F.f02t02</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/chem.201604190" target="_blank" >10.1002/chem.201604190</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

Popis výsledku v původním jazyce

Our studies have been focused on the synthesis of N-Ga coordinated organogallium sulfides [L1Ga(S)]3 (1) and [L2Ga(S)]2 (2) containing either N,C,N- or C,N-chelating ligands L1 or L2 (L1 is {2,6-(Me2NCH2)2C6H3} and L2 is {2-(Et2NCH2)-4,6-tBu2-C6H2}). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N?Ga coordinated organogallium tetrasulfide L1Ga(2-S4) (3) was prepared and the unprecedented complex [{2-[CH{(CH2)3CH3}(-OH)]-6-CH2NMe2}C6H3]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.

Název v anglickém jazyce

Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

Popis výsledku anglicky

Our studies have been focused on the synthesis of N-Ga coordinated organogallium sulfides [L1Ga(S)]3 (1) and [L2Ga(S)]2 (2) containing either N,C,N- or C,N-chelating ligands L1 or L2 (L1 is {2,6-(Me2NCH2)2C6H3} and L2 is {2-(Et2NCH2)-4,6-tBu2-C6H2}). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N?Ga coordinated organogallium tetrasulfide L1Ga(2-S4) (3) was prepared and the unprecedented complex [{2-[CH{(CH2)3CH3}(-OH)]-6-CH2NMe2}C6H3]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/GA15-07912S" target="_blank" >GA15-07912S: Nové 2D vrstevnaté chalkogenidové tenké vrstvy a 3D nanostruktury: Syntéza a charakterizace</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chemistry A European Journal

ISSN

0947-6539

e-ISSN

—

Svazek periodika

22

Číslo periodika v rámci svazku

52

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

7

Strana od-do

18817-18823

Kód UT WoS článku

000393219300027

EID výsledku v databázi Scopus

2-s2.0-85006040078