A quest for ideal electric field-driven MX@C70 endohedral fullerene memristors: which MX fits the best?
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22340%2F23%3A43933970" target="_blank" >RIV/60461373:22340/23:43933970 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/61388963:_____/23:00572312 RIV/00216208:11310/23:10473249
Výsledek na webu
<a href="https://pubs.rsc.org/en/content/articlelanding/2023/cp/d3cp01149f" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2023/cp/d3cp01149f</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d3cp01149f" target="_blank" >10.1039/d3cp01149f</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
A quest for ideal electric field-driven MX@C70 endohedral fullerene memristors: which MX fits the best?
Popis výsledku v původním jazyce
Endohedral fullerenes with a dipolar molecule enclosed in the fullerene cage have great potential in molecular electronics, such as diodes, switches, or molecular memristors. Here, we study a series of model systems based on MX@D5h(1)-C70 (M = a metal or hydrogen, X = a halogen or a chalcogen) endohedral fullerenes to identify potential molecular memristors and to derive a general formula for rapid identification of potential memristors among analogous MX@Cn systems. To obtain sufficiently accurate results for switching barriers and encapsulation energies, we perform a benchmark of ten DFT functionals against ab initio SCS-MP2 and DLPNO-CCSD(T) methods at the complete basis set limit. The whole series is then investigated using the PBE0 functional which was found to be the most efficient vs. the ab initio methods. Nine of the 34 MX@C70 molecules studied are predicted to have suitable switching barriers to be considered as potential candidates for molecular switches and memristors. We have identified several structure-property relationships for the switching barrier and response of the systems to the electric field, in particular the dependence of the switching barrier on the available space for M-X switching and faster response of the system to the electric field with a larger dipole moment of MX and MX@C70 © 2023 The Royal Society of Chemistry.
Název v anglickém jazyce
A quest for ideal electric field-driven MX@C70 endohedral fullerene memristors: which MX fits the best?
Popis výsledku anglicky
Endohedral fullerenes with a dipolar molecule enclosed in the fullerene cage have great potential in molecular electronics, such as diodes, switches, or molecular memristors. Here, we study a series of model systems based on MX@D5h(1)-C70 (M = a metal or hydrogen, X = a halogen or a chalcogen) endohedral fullerenes to identify potential molecular memristors and to derive a general formula for rapid identification of potential memristors among analogous MX@Cn systems. To obtain sufficiently accurate results for switching barriers and encapsulation energies, we perform a benchmark of ten DFT functionals against ab initio SCS-MP2 and DLPNO-CCSD(T) methods at the complete basis set limit. The whole series is then investigated using the PBE0 functional which was found to be the most efficient vs. the ab initio methods. Nine of the 34 MX@C70 molecules studied are predicted to have suitable switching barriers to be considered as potential candidates for molecular switches and memristors. We have identified several structure-property relationships for the switching barrier and response of the systems to the electric field, in particular the dependence of the switching barrier on the available space for M-X switching and faster response of the system to the electric field with a larger dipole moment of MX and MX@C70 © 2023 The Royal Society of Chemistry.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Návaznosti výsledku
Projekt
—
Návaznosti
—
Ostatní
Rok uplatnění
2023
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN
1463-9076
e-ISSN
—
Svazek periodika
25
Číslo periodika v rámci svazku
20
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
12
Strana od-do
14245-14256
Kód UT WoS článku
000986210900001
EID výsledku v databázi Scopus
2-s2.0-85159351152