The influence of doping on the Raman intensity of the D band in single walled carbon nanotubes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F10%3A00334512" target="_blank" >RIV/61388955:_____/10:00334512 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

The influence of doping on the Raman intensity of the D band in single walled carbon nanotubes

Popis výsledku v původním jazyce

The D band in the Raman spectra of single walled carbon nanotubes is considered as an indicator of defects in carbon nanotubes. However, its dependence on charge-transfer doping is generally ignored, despite the studied samples are often naturally doped.We studied the intensity of the D band, the ratio of the intensities of the D band and TG band (ID/ITG) and the ratio of the intensities of the D and G0 band (ID/IG?) in the Raman spectra of the single walled carbon nanotubes in dependence on a doping level. We tested two laser excitation energies viz 2.41 and 1.92 eV, which are in resonance with semiconducting and metallic tubes, respectively in our sample. It is shown that the D band intensity is significantly attenuated in doped carbon nanotubes sample for both semiconducting and metallic tubes. The ID/ITG ratio is weakly dependent on doping for semiconducting tubes but for metallic tubes the ID/ITG ratio exhibits strong dependence on doping.

Název v anglickém jazyce

The influence of doping on the Raman intensity of the D band in single walled carbon nanotubes

Popis výsledku anglicky

The D band in the Raman spectra of single walled carbon nanotubes is considered as an indicator of defects in carbon nanotubes. However, its dependence on charge-transfer doping is generally ignored, despite the studied samples are often naturally doped.We studied the intensity of the D band, the ratio of the intensities of the D band and TG band (ID/ITG) and the ratio of the intensities of the D and G0 band (ID/IG?) in the Raman spectra of the single walled carbon nanotubes in dependence on a doping level. We tested two laser excitation energies viz 2.41 and 1.92 eV, which are in resonance with semiconducting and metallic tubes, respectively in our sample. It is shown that the D band intensity is significantly attenuated in doped carbon nanotubes sample for both semiconducting and metallic tubes. The ID/ITG ratio is weakly dependent on doping for semiconducting tubes but for metallic tubes the ID/ITG ratio exhibits strong dependence on doping.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CG - Elektrochemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Carbon

ISSN

0008-6223

e-ISSN

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Svazek periodika

48

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

000274004700030

EID výsledku v databázi Scopus

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