Large Variations of the Raman Signal in the Spectra of Twisted Bilayer Graphene on a BN Substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F12%3A00384496" target="_blank" >RIV/61388955:_____/12:00384496 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/jz300176a" target="_blank" >http://dx.doi.org/10.1021/jz300176a</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/jz300176a" target="_blank" >10.1021/jz300176a</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Large Variations of the Raman Signal in the Spectra of Twisted Bilayer Graphene on a BN Substrate

Popis výsledku v původním jazyce

We report an unusual enhancement of the Raman signal of the G mode in a twisted graphene bilayer (2-LG) on a hexagonal single-crystalline boron nitride substrate. We used an isotopically engineered 2-LG, where the top layer was composed of C-13 atoms andthe bottom layer of C-12 atoms. Consequently, it was possible by Raman spectroscopy to distinguish between the enhancement coming from the top and bottom layers. The enhancement of the G mode was, however, found to be similar for the top and bottom layers, and this enhancement effect was observed only at certain locations on the substrate. The experiment with two different laser excitation energies showed that the location of the enhanced spots is dependent on the laser excitation energy. Therefore ourresults suggest that the enhancement comes from new states in the electronic structure, which are a consequence of a local specific rotation of the grains in graphene layers.

Název v anglickém jazyce

Large Variations of the Raman Signal in the Spectra of Twisted Bilayer Graphene on a BN Substrate

Popis výsledku anglicky

We report an unusual enhancement of the Raman signal of the G mode in a twisted graphene bilayer (2-LG) on a hexagonal single-crystalline boron nitride substrate. We used an isotopically engineered 2-LG, where the top layer was composed of C-13 atoms andthe bottom layer of C-12 atoms. Consequently, it was possible by Raman spectroscopy to distinguish between the enhancement coming from the top and bottom layers. The enhancement of the G mode was, however, found to be similar for the top and bottom layers, and this enhancement effect was observed only at certain locations on the substrate. The experiment with two different laser excitation energies showed that the location of the enhanced spots is dependent on the laser excitation energy. Therefore ourresults suggest that the enhancement comes from new states in the electronic structure, which are a consequence of a local specific rotation of the grains in graphene layers.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CG - Elektrochemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry Letters

ISSN

1948-7185

e-ISSN

—

Svazek periodika

3

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

796-799

Kód UT WoS článku

000301629000023

EID výsledku v databázi Scopus

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