High-quality graphene on single crystal Ir(111) films on Si(111) wafers: Synthesis and multi-spectroscopic characterization

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F15%3A00438497" target="_blank" >RIV/61388955:_____/15:00438497 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.carbon.2014.09.045" target="_blank" >http://dx.doi.org/10.1016/j.carbon.2014.09.045</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.carbon.2014.09.045" target="_blank" >10.1016/j.carbon.2014.09.045</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-quality graphene on single crystal Ir(111) films on Si(111) wafers: Synthesis and multi-spectroscopic characterization

Popis výsledku v původním jazyce

The characterization of graphene by electron and optical spectroscopy is well established and has led to numerous breakthroughs in material science. Yet, it is interesting to note that these characterization methods are almost never carried out on the same sample, i.e., electron spectroscopy uses epitaxial graphene while optical spectroscopy relies on cleaved graphene flakes. In order to bring coherence and convergence to this branch, a universal and easy-to-prepare substrate is needed. Here we suggestthat chemical vapour deposition (CVD) grown graphene on thin monocrystalline Ir(111) films, which are grown heteroepitaxially on Si(111) wafers with an yttria stabilized zirconia (YSZ) buffer layer, perfectly meets these needs. We investigate graphene prepared in this way by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, angle-resolved photoemission spectroscopy (ARPES), resonance Raman spec

Název v anglickém jazyce

High-quality graphene on single crystal Ir(111) films on Si(111) wafers: Synthesis and multi-spectroscopic characterization

Popis výsledku anglicky

The characterization of graphene by electron and optical spectroscopy is well established and has led to numerous breakthroughs in material science. Yet, it is interesting to note that these characterization methods are almost never carried out on the same sample, i.e., electron spectroscopy uses epitaxial graphene while optical spectroscopy relies on cleaved graphene flakes. In order to bring coherence and convergence to this branch, a universal and easy-to-prepare substrate is needed. Here we suggestthat chemical vapour deposition (CVD) grown graphene on thin monocrystalline Ir(111) films, which are grown heteroepitaxially on Si(111) wafers with an yttria stabilized zirconia (YSZ) buffer layer, perfectly meets these needs. We investigate graphene prepared in this way by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, angle-resolved photoemission spectroscopy (ARPES), resonance Raman spec

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP208%2F12%2F1062" target="_blank" >GAP208/12/1062: Spektroskopie a spektroelektrochemie grafenu a grafenových multivrtsev</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Carbon

ISSN

0008-6223

e-ISSN

—

Svazek periodika

81

Číslo periodika v rámci svazku

JAN 2015

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

167-173

Kód UT WoS článku

000345682900019

EID výsledku v databázi Scopus

2-s2.0-84922688397