Ultrathin Buffer Layers of SnO2 by Atomic Layer Deposition: Perfect Blocking Function and Thermal Stability

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F17%3A00471281" target="_blank" >RIV/61388955:_____/17:00471281 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/acs.jpcc.6b09965" target="_blank" >http://dx.doi.org/10.1021/acs.jpcc.6b09965</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.6b09965" target="_blank" >10.1021/acs.jpcc.6b09965</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ultrathin Buffer Layers of SnO2 by Atomic Layer Deposition: Perfect Blocking Function and Thermal Stability

Popis výsledku v původním jazyce

This study pinpoints the advantages of ultrathin electron 15 selective layers (ESL) of SnO2 fabricated by atomic layer deposition (ALD). These layers recently caught attention in planar perovskite solar cells and appear as powerful alternatives to other oxides such as TiO2. Here, we carry out a thorough characterization of the nature of these ultrathin ALD SnO2 layers providing a novel physical insight for the design of various photoelectrodes in perovskite and dye-sensitized solar cells and in photoelectrochemical water splitting. We use a combination of cyclic voltammetry, electrochemical impedance spectroscopy, Hall measurements, X-ray photoelectron spectroscopy, atomic force microscopy, and electron microscopy to analyze the blocking behavior and energetics of as-deposited (low-temperature) and also calcined ALD SnO2 layers. First, we find that the low-temperature ALD-grown SnO2 layers are amorphous and perfectly pinhole-free for thicknesses down to 2 run. This exceptional blocking behavior of thin ALD SnO2 layers allows photoelectrode designs with even thinner electron selective layers, thus potentially minimizing resistance losses. The compact nature and blocking function of thin SnO2 films are not perturbed by annealing at 450 degrees C, which is a significant benefit compared to other amorphous ALD oxides. Further on, we show that amorphous and crystalline ALD SnO2 films substantially differ in their Hatband (and conduction band) positions a finding to be taken into account when considering band alignment engineering in solar devices using these high-quality blocking layers.

Název v anglickém jazyce

Ultrathin Buffer Layers of SnO2 by Atomic Layer Deposition: Perfect Blocking Function and Thermal Stability

Popis výsledku anglicky

This study pinpoints the advantages of ultrathin electron 15 selective layers (ESL) of SnO2 fabricated by atomic layer deposition (ALD). These layers recently caught attention in planar perovskite solar cells and appear as powerful alternatives to other oxides such as TiO2. Here, we carry out a thorough characterization of the nature of these ultrathin ALD SnO2 layers providing a novel physical insight for the design of various photoelectrodes in perovskite and dye-sensitized solar cells and in photoelectrochemical water splitting. We use a combination of cyclic voltammetry, electrochemical impedance spectroscopy, Hall measurements, X-ray photoelectron spectroscopy, atomic force microscopy, and electron microscopy to analyze the blocking behavior and energetics of as-deposited (low-temperature) and also calcined ALD SnO2 layers. First, we find that the low-temperature ALD-grown SnO2 layers are amorphous and perfectly pinhole-free for thicknesses down to 2 run. This exceptional blocking behavior of thin ALD SnO2 layers allows photoelectrode designs with even thinner electron selective layers, thus potentially minimizing resistance losses. The compact nature and blocking function of thin SnO2 films are not perturbed by annealing at 450 degrees C, which is a significant benefit compared to other amorphous ALD oxides. Further on, we show that amorphous and crystalline ALD SnO2 films substantially differ in their Hatband (and conduction band) positions a finding to be taken into account when considering band alignment engineering in solar devices using these high-quality blocking layers.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

<a href="/cs/project/GA13-07724S" target="_blank" >GA13-07724S: Materiálové inženýrství pro inovativní Graetzelovy solární články</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

—

Svazek periodika

121

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

342-350

Kód UT WoS článku

000392035500038

EID výsledku v databázi Scopus

2-s2.0-85014068752