Adsorption Site-Dependent Mobility Behavior in Graphene Exposed to Gas Oxygen
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F18%3A00498916" target="_blank" >RIV/61388955:_____/18:00498916 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/61989592:15310/18:73590066
Výsledek na webu
<a href="http://dx.doi.org/10.1021/acs.jpcc.8b06906" target="_blank" >http://dx.doi.org/10.1021/acs.jpcc.8b06906</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.jpcc.8b06906" target="_blank" >10.1021/acs.jpcc.8b06906</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Adsorption Site-Dependent Mobility Behavior in Graphene Exposed to Gas Oxygen
Popis výsledku v původním jazyce
Transport characteristics of graphene field-effect transistors were measured in situ in oxygen/nitrogen atmospheres and at various temperatures. Mobilities of holes were extracted from transport characteristics as well as the doping level depending on the time of graphene exposure to oxygen/nitrogen atmosphere. The hole mobility showed significant decrease upon the oxygen adsorption to low energy adsorption sites (sp(2) carbon). However, it remained unaffected by the oxygen adsorption to high-energy adsorption sites which are represented by defects, impurities, transfer residuals, edges, and functional groups on graphene. The Dirac point was upshifted for both the low- and high-energy adsorption events. Activation energy of oxygen adsorption/desorption was estimated from temperature-dependent desorption rate coefficients as 215 and 450 meV for the low- and high-energy adsorption sites, respectively.
Název v anglickém jazyce
Adsorption Site-Dependent Mobility Behavior in Graphene Exposed to Gas Oxygen
Popis výsledku anglicky
Transport characteristics of graphene field-effect transistors were measured in situ in oxygen/nitrogen atmospheres and at various temperatures. Mobilities of holes were extracted from transport characteristics as well as the doping level depending on the time of graphene exposure to oxygen/nitrogen atmosphere. The hole mobility showed significant decrease upon the oxygen adsorption to low energy adsorption sites (sp(2) carbon). However, it remained unaffected by the oxygen adsorption to high-energy adsorption sites which are represented by defects, impurities, transfer residuals, edges, and functional groups on graphene. The Dirac point was upshifted for both the low- and high-energy adsorption events. Activation energy of oxygen adsorption/desorption was estimated from temperature-dependent desorption rate coefficients as 215 and 450 meV for the low- and high-energy adsorption sites, respectively.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10403 - Physical chemistry
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Physical Chemistry C
ISSN
1932-7447
e-ISSN
—
Svazek periodika
122
Číslo periodika v rámci svazku
37
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
7
Strana od-do
21493-21499
Kód UT WoS článku
000445711100042
EID výsledku v databázi Scopus
2-s2.0-85053787931