Spinristor: A Spin-Filtering Memristor

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F23%3A00573719" target="_blank" >RIV/61388963:_____/23:00573719 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/23:00133214 RIV/00216208:11310/23:10471468

Výsledek na webu

<a href="https://doi.org/10.1002/aelm.202300360" target="_blank" >https://doi.org/10.1002/aelm.202300360</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/aelm.202300360" target="_blank" >10.1002/aelm.202300360</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Spinristor: A Spin-Filtering Memristor

Popis výsledku v původním jazyce

In this paper, an in silico proof of concept of a spinristor is proposed and provided, a new electronic component that combines a spin-filter and a memristor in a single molecule, useful for in-memory processing. It builds on the idea of an open-shell transition metal ion enclosed within an elliptical fullerene connected to a pair of electrodes. The spin- and electronic-polarization induced by the enclosed open-shell metallic ion leads to differential rectification of the electrons at low voltages applied between the source–drain electrodes, VSD. The position of the encapsulated ion can be switched by a high VSD which leads to a change in the direction of the rectification and the spin-filtering ratio. The system can thus be used as a switching rectifier, that is, a memristor and a spin-filter, therefore, a spinristor. The effect of different linkers on the function of the proposed device is further analyzed to show that linkers reduce the overall conductivity by an order of magnitude, but improve the spin-filtering ratio. The computations suggest that nitrile and isocyanide linkers enhance the rectification, too. To the best of the authors knowledge, spinristor has no macroscopic counterpart in electronics, so far.

Název v anglickém jazyce

Spinristor: A Spin-Filtering Memristor

Popis výsledku anglicky

In this paper, an in silico proof of concept of a spinristor is proposed and provided, a new electronic component that combines a spin-filter and a memristor in a single molecule, useful for in-memory processing. It builds on the idea of an open-shell transition metal ion enclosed within an elliptical fullerene connected to a pair of electrodes. The spin- and electronic-polarization induced by the enclosed open-shell metallic ion leads to differential rectification of the electrons at low voltages applied between the source–drain electrodes, VSD. The position of the encapsulated ion can be switched by a high VSD which leads to a change in the direction of the rectification and the spin-filtering ratio. The system can thus be used as a switching rectifier, that is, a memristor and a spin-filter, therefore, a spinristor. The effect of different linkers on the function of the proposed device is further analyzed to show that linkers reduce the overall conductivity by an order of magnitude, but improve the spin-filtering ratio. The computations suggest that nitrile and isocyanide linkers enhance the rectification, too. To the best of the authors knowledge, spinristor has no macroscopic counterpart in electronics, so far.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

<a href="/cs/project/GA21-17806S" target="_blank" >GA21-17806S: Endohedrální fullereny pro molekulární součástky: Memristory a spinristory</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Electronic Materials

ISSN

2199-160X

e-ISSN

2199-160X

Svazek periodika

9

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

9

Strana od-do

2300360

Kód UT WoS článku

001023181100001

EID výsledku v databázi Scopus

2-s2.0-85163981348