SrAl12O19 thin films by chemical solution deposition and their use as buffer layers for oriented growth of hexagonal ferrites

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388980%3A_____%2F16%3A00463507" target="_blank" >RIV/61388980:_____/16:00463507 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/16:10333739

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2016.07.064" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2016.07.064</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2016.07.064" target="_blank" >10.1016/j.tsf.2016.07.064</a>

Jazyk výsledku

angličtina

Název v původním jazyce

SrAl12O19 thin films by chemical solution deposition and their use as buffer layers for oriented growth of hexagonal ferrites

Popis výsledku v původním jazyce

Thin films of SrAl12O19 were prepared on alpha-Al2O3(0001) substrates through the chemical solution deposition method and thermal treatment. Two types of precursor systems were used: stoichiometric mixture of strontium methoxyethoxide with aluminium iso-butoxide, and strontium methoxyethoxide topotactically reacting with Al2O3 substrate. Two distinctly different film-substrate orientation relationships were observed. In the latter case the orientation can described as perfect hexagon-on-hexagon epitaxy with (11 (2) over bar0)(SrAl12O19)||(10 (1) over bar0)Al2O3 and (0001)Al2O3||(0001)SrAl12O19. This relationship has 1.17% lattice misfit in the substrate plane. In the former case SrAl12O19 grains are rotated about the substrate normal and form more orientation variants that can be explained by the coincident-site lattice model for grain boundaries. We demonstrated that both types of SrAl12O19 films can be used as a chemical buffer and structural template layer for the growth of oriented hexagonal ferrite thin films. In both types of films the (BaSr)Fe12O19 phase cope the in-plane orientation of their respective templates.

Název v anglickém jazyce

SrAl12O19 thin films by chemical solution deposition and their use as buffer layers for oriented growth of hexagonal ferrites

Popis výsledku anglicky

Thin films of SrAl12O19 were prepared on alpha-Al2O3(0001) substrates through the chemical solution deposition method and thermal treatment. Two types of precursor systems were used: stoichiometric mixture of strontium methoxyethoxide with aluminium iso-butoxide, and strontium methoxyethoxide topotactically reacting with Al2O3 substrate. Two distinctly different film-substrate orientation relationships were observed. In the latter case the orientation can described as perfect hexagon-on-hexagon epitaxy with (11 (2) over bar0)(SrAl12O19)||(10 (1) over bar0)Al2O3 and (0001)Al2O3||(0001)SrAl12O19. This relationship has 1.17% lattice misfit in the substrate plane. In the former case SrAl12O19 grains are rotated about the substrate normal and form more orientation variants that can be explained by the coincident-site lattice model for grain boundaries. We demonstrated that both types of SrAl12O19 films can be used as a chemical buffer and structural template layer for the growth of oriented hexagonal ferrite thin films. In both types of films the (BaSr)Fe12O19 phase cope the in-plane orientation of their respective templates.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

—

Projekt

<a href="/cs/project/GA14-18392S" target="_blank" >GA14-18392S: Růst a reálná struktura tenkých vrstev hexagonálních feritů s magnetoelektrickým jevem</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

616

Číslo periodika v rámci svazku

OCT

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

10

Strana od-do

228-237

Kód UT WoS článku

000389388600033

EID výsledku v databázi Scopus

2-s2.0-84983474964