Early stages of growth of gold layers sputter deposited on glass and silicon substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F12%3A00382704" target="_blank" >RIV/61389005:_____/12:00382704 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22310/12:43894040

Výsledek na webu

<a href="http://dx.doi.org/10.1186/1556-276X-7-241" target="_blank" >http://dx.doi.org/10.1186/1556-276X-7-241</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1186/1556-276X-7-241" target="_blank" >10.1186/1556-276X-7-241</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Early stages of growth of gold layers sputter deposited on glass and silicon substrates

Popis výsledku v původním jazyce

Extremely thin gold layers were sputter deposited on glass and silicon substrates, and their thickness and morphology were studied by Rutherford backscattering (RBS) and atomic force microscopy (AFM) methods. The deposited layers change from discontinuous to continuous ones for longer deposition times. While the deposition rate on the silicon substrate is constant, nearly independent on the layer thickness, the rate on the glass substrate increases with increasing layer thickness. The observed dependence can be explained by a simple kinetic model, taking into account different sticking probabilities of gold atoms on a bare glass substrate and regions with gold coverage. Detailed analysis of the shape of the RBS gold signal shows that in the initial stages of the deposition, the gold layers on the glass substrate consist of gold islands with significantly different thicknesses. These findings were confirmed by AFM measurements, too. Gold coverage of the silicon substrate is rather homog

Název v anglickém jazyce

Early stages of growth of gold layers sputter deposited on glass and silicon substrates

Popis výsledku anglicky

Extremely thin gold layers were sputter deposited on glass and silicon substrates, and their thickness and morphology were studied by Rutherford backscattering (RBS) and atomic force microscopy (AFM) methods. The deposited layers change from discontinuous to continuous ones for longer deposition times. While the deposition rate on the silicon substrate is constant, nearly independent on the layer thickness, the rate on the glass substrate increases with increasing layer thickness. The observed dependence can be explained by a simple kinetic model, taking into account different sticking probabilities of gold atoms on a bare glass substrate and regions with gold coverage. Detailed analysis of the shape of the RBS gold signal shows that in the initial stages of the deposition, the gold layers on the glass substrate consist of gold islands with significantly different thicknesses. These findings were confirmed by AFM measurements, too. Gold coverage of the silicon substrate is rather homog

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

<a href="/cs/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Příprava, modifikace a charakterizace materiálů zářením</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanoscale Research Letters

ISSN

1931-7573

e-ISSN

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Svazek periodika

7

Číslo periodika v rámci svazku

241

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

000307252700001

EID výsledku v databázi Scopus

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