Boron and nitrogen doping of graphene via thermal exfoliation of graphite oxide in a BF3 or NH3 atmosphere: contrasting properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F13%3A00399069" target="_blank" >RIV/61389005:_____/13:00399069 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1039/c3ta12460f" target="_blank" >http://dx.doi.org/10.1039/c3ta12460f</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c3ta12460f" target="_blank" >10.1039/c3ta12460f</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Boron and nitrogen doping of graphene via thermal exfoliation of graphite oxide in a BF3 or NH3 atmosphere: contrasting properties

Popis výsledku v původním jazyce

The fabrication of graphenes doped with electron withdrawing/donating elements can be realized through the synthesis procedures reported in this paper. Doping of the graphenes occurs during the thermal exfoliation step of graphite oxide in the presence of the dopant containing gas (BF3 or NH3). The materials are extensively characterized by high-resolution X-ray photoelectron spectroscopy, prompt gamma-ray activation analysis and Raman spectroscopy. Their electrical and electrochemical properties related to heterogeneous electron transfer rates and oxygen reductions are investigated. The doped materials display significant differences in their electronic properties where graphenes doped by electron donating dopants exhibit the largest conductivity as compared to those doped by electron accepting dopants. The scalable method reported here is able to successfully implant B and N into the graphene lattice and hence presented important future implications for the production of these materi

Název v anglickém jazyce

Boron and nitrogen doping of graphene via thermal exfoliation of graphite oxide in a BF3 or NH3 atmosphere: contrasting properties

Popis výsledku anglicky

The fabrication of graphenes doped with electron withdrawing/donating elements can be realized through the synthesis procedures reported in this paper. Doping of the graphenes occurs during the thermal exfoliation step of graphite oxide in the presence of the dopant containing gas (BF3 or NH3). The materials are extensively characterized by high-resolution X-ray photoelectron spectroscopy, prompt gamma-ray activation analysis and Raman spectroscopy. Their electrical and electrochemical properties related to heterogeneous electron transfer rates and oxygen reductions are investigated. The doped materials display significant differences in their electronic properties where graphenes doped by electron donating dopants exhibit the largest conductivity as compared to those doped by electron accepting dopants. The scalable method reported here is able to successfully implant B and N into the graphene lattice and hence presented important future implications for the production of these materi

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

<a href="/cs/project/LM2011019" target="_blank" >LM2011019: CANAM ? příspěvek k provozu a k reinvesticím Centra urychlovačů a jaderných analytických metod</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of materials chemistry A

ISSN

2050-7488

e-ISSN

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Svazek periodika

1

Číslo periodika v rámci svazku

42

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

13146-13153

Kód UT WoS článku

000325577300016

EID výsledku v databázi Scopus

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