The sensory and photo-catalytic properties of graphene oxide and polyimide thin films implanted by 1500 keV Cu ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F23%3A00573705" target="_blank" >RIV/61389005:_____/23:00573705 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/44555601:13440/23:43897838 RIV/60461373:22310/23:43927562

Výsledek na webu

<a href="https://doi.org/10.1016/j.nimb.2023.05.063" target="_blank" >https://doi.org/10.1016/j.nimb.2023.05.063</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2023.05.063" target="_blank" >10.1016/j.nimb.2023.05.063</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The sensory and photo-catalytic properties of graphene oxide and polyimide thin films implanted by 1500 keV Cu ions

Popis výsledku v původním jazyce

Thin films of polyimide (PI) and graphene oxide (GO) were exposed to the accelerated Cu-ions with an energy of 1500 keV at different ion fluences (3.75 x 1012, 3.75 x 1014, 1 x 1016) cm-2. The reason for Cu-ion irradiation lies in the modification of thin PI and GO layers and their subsequent use in electronics, photo-catalysis and humidity sensing. It was expected that three ways would primarily carry out modification: i) interaction of the accelerated ions with atoms and electrons of the irradiated films, ii) implantation of Cu ions inside the matrices and their attachment to the structures in the form of CuO, and iii) formation of C and Cu aggregates and Cu nanoparticles in the subsurface layer to form an electrically conductive network. The effects of the interactions of energetic Cu-ions on the PI and GO matrices, including the prediction of the depth of Cu ion penetration, were simulated by SRIM software. Elemental changes, including the depth profiles of implanted Cu-ions, were investigated by Rutherford backscattering spectrometry (RBS) and Elastic recoil detection analysis (ERDA). Changes in the chemical bonding on the PI and GO surfaces were studied by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The effect of energetic Cu-ions on the surface morphology was analyzed by Atomic force microscopy (AFM). For the possible application of PI and GO composites in electronics and sensory, the sheet resistivity were measured by the two- point method and the effect of air humidity on electrical properties was studied. Furthermore, the degradation of Rhodamine B solution in the presence of prepared composites under UV-light irradiation was measured for possible use in photo-catalysis. It was found that the interaction of Cu- ions with the matrix leads to the release of oxygen and hydrogen, resulting in an increase in carbon concentration. The increase in carbon concentration leads to an increase in the electrical conductivity of both materials. The irradiation with Cu ion fluence of 1 x 1016 cm-2 probably formed in PI a subsurface conducting network that reduced the sheet resistivity by almost eleven orders of magnitude. The ion irradiation by Cu ion with fluences below 1 x 1016 cm-2 enhances the photo- catalytic properties of both used materials and the best result was achieved in the case of PI irradiated by the ion fluence of 3.75 x 1014 cm-2.

Název v anglickém jazyce

The sensory and photo-catalytic properties of graphene oxide and polyimide thin films implanted by 1500 keV Cu ions

Popis výsledku anglicky

Thin films of polyimide (PI) and graphene oxide (GO) were exposed to the accelerated Cu-ions with an energy of 1500 keV at different ion fluences (3.75 x 1012, 3.75 x 1014, 1 x 1016) cm-2. The reason for Cu-ion irradiation lies in the modification of thin PI and GO layers and their subsequent use in electronics, photo-catalysis and humidity sensing. It was expected that three ways would primarily carry out modification: i) interaction of the accelerated ions with atoms and electrons of the irradiated films, ii) implantation of Cu ions inside the matrices and their attachment to the structures in the form of CuO, and iii) formation of C and Cu aggregates and Cu nanoparticles in the subsurface layer to form an electrically conductive network. The effects of the interactions of energetic Cu-ions on the PI and GO matrices, including the prediction of the depth of Cu ion penetration, were simulated by SRIM software. Elemental changes, including the depth profiles of implanted Cu-ions, were investigated by Rutherford backscattering spectrometry (RBS) and Elastic recoil detection analysis (ERDA). Changes in the chemical bonding on the PI and GO surfaces were studied by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The effect of energetic Cu-ions on the surface morphology was analyzed by Atomic force microscopy (AFM). For the possible application of PI and GO composites in electronics and sensory, the sheet resistivity were measured by the two- point method and the effect of air humidity on electrical properties was studied. Furthermore, the degradation of Rhodamine B solution in the presence of prepared composites under UV-light irradiation was measured for possible use in photo-catalysis. It was found that the interaction of Cu- ions with the matrix leads to the release of oxygen and hydrogen, resulting in an increase in carbon concentration. The increase in carbon concentration leads to an increase in the electrical conductivity of both materials. The irradiation with Cu ion fluence of 1 x 1016 cm-2 probably formed in PI a subsurface conducting network that reduced the sheet resistivity by almost eleven orders of magnitude. The ion irradiation by Cu ion with fluences below 1 x 1016 cm-2 enhances the photo- catalytic properties of both used materials and the best result was achieved in the case of PI irradiated by the ion fluence of 3.75 x 1014 cm-2.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

1872-9584

Svazek periodika

541

Číslo periodika v rámci svazku

AUG

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

10

Strana od-do

180-189

Kód UT WoS článku

001018679200001

EID výsledku v databázi Scopus

2-s2.0-85160004453