SiC plasma characterization produced by 3 ns pulse laser at 1010 W/cm2 intensity

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F25%3A00587594" target="_blank" >RIV/61389005:_____/25:00587594 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.tandfonline.com/doi/full/10.1080/10420150.2024.2369122" target="_blank" >https://www.tandfonline.com/doi/full/10.1080/10420150.2024.2369122</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1080/10420150.2024.2369122" target="_blank" >10.1080/10420150.2024.2369122</a>

Jazyk výsledku

angličtina

Název v původním jazyce

SiC plasma characterization produced by 3 ns pulse laser at 1010 W/cm2 intensity

Popis výsledku v původním jazyce

A silicon carbide (SiC) plasma has been produced by a Q-switched laser at 1064 nm, 3 ns pulse and 10(10) W/cm(2) intensity, in high vacuum to investigate the fundamental mechanisms of laser-semiconductor interaction. Although the high hardness and chemical stability restrain the SiC micromachining, it is a valuable semiconductor for devices working under extreme conditions. The plasma has been characterized by using time-of-flight (TOF) measurements of ions detected by an ion collector ring (ICR) and an ion energy analyzer (IEA). Fast CCD camera, quadrupole mass spectroscopy (QMS) and surface profiler have been employed to provide deep insights into the laser-SiC interaction mechanisms. Ion kinetic energies, charge states, plasma expansion velocity, ablation yield per laser pulse, plasma temperature and density have been measured. Applications of the laser-generated plasma are presented and discussed.

Název v anglickém jazyce

SiC plasma characterization produced by 3 ns pulse laser at 1010 W/cm2 intensity

Popis výsledku anglicky

A silicon carbide (SiC) plasma has been produced by a Q-switched laser at 1064 nm, 3 ns pulse and 10(10) W/cm(2) intensity, in high vacuum to investigate the fundamental mechanisms of laser-semiconductor interaction. Although the high hardness and chemical stability restrain the SiC micromachining, it is a valuable semiconductor for devices working under extreme conditions. The plasma has been characterized by using time-of-flight (TOF) measurements of ions detected by an ion collector ring (ICR) and an ion energy analyzer (IEA). Fast CCD camera, quadrupole mass spectroscopy (QMS) and surface profiler have been employed to provide deep insights into the laser-SiC interaction mechanisms. Ion kinetic energies, charge states, plasma expansion velocity, ablation yield per laser pulse, plasma temperature and density have been measured. Applications of the laser-generated plasma are presented and discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10304 - Nuclear physics

Projekt

<a href="/cs/project/EF16_013%2F0001812" target="_blank" >EF16_013/0001812: Centrum urychlovačů a jaderných analytických metod - OP</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Radiation Effects and Defects in Solids

ISSN

1042-0150

e-ISSN

1029-4953

Svazek periodika

180

Číslo periodika v rámci svazku

3-4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

10

Strana od-do

380-389

Kód UT WoS článku

001260291600001

EID výsledku v databázi Scopus

2-s2.0-85197607467