Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389013%3A_____%2F22%3A00563406" target="_blank" >RIV/61389013:_____/22:00563406 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.rsc.org/en/content/articlelanding/2022/CP/D2CP03119A" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2022/CP/D2CP03119A</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/D2CP03119A" target="_blank" >10.1039/D2CP03119A</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors

Popis výsledku v původním jazyce

We have theoretically investigated the feasibility of constructing a spintronic field-effect transistor with the active channel made of a polymer chain with the antiferromagnetic coupling oriented in the source-to-drain direction. We found two different device function regimes controlling the on-chain spin–charge carrier density by tuning the gate voltage. At higher charge carrier densities, the source–drain current linearly increases with decreasing charge carrier densities. In this regime, no polymer spin-polarized current is observed. Upon reaching a critical gate voltage, the current decreases with decreasing charge densities. It is accompanied by the formation of spin-polarized current, generated by an on-chain process, which can be related to spin–charge spatial distribution symmetry breaking caused either by an application of the source-to-drain voltage (higher spin polarization near the drain), or the breakdown of the Peierls dimerization near chain ends. Numerical simulation of the transistor characteristics suggests that the design of a polymer spintronic field-effect transistor is in principle feasible.n

Název v anglickém jazyce

Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors

Popis výsledku anglicky

We have theoretically investigated the feasibility of constructing a spintronic field-effect transistor with the active channel made of a polymer chain with the antiferromagnetic coupling oriented in the source-to-drain direction. We found two different device function regimes controlling the on-chain spin–charge carrier density by tuning the gate voltage. At higher charge carrier densities, the source–drain current linearly increases with decreasing charge carrier densities. In this regime, no polymer spin-polarized current is observed. Upon reaching a critical gate voltage, the current decreases with decreasing charge densities. It is accompanied by the formation of spin-polarized current, generated by an on-chain process, which can be related to spin–charge spatial distribution symmetry breaking caused either by an application of the source-to-drain voltage (higher spin polarization near the drain), or the breakdown of the Peierls dimerization near chain ends. Numerical simulation of the transistor characteristics suggests that the design of a polymer spintronic field-effect transistor is in principle feasible.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10404 - Polymer science

Projekt

<a href="/cs/project/LTAUSA19066" target="_blank" >LTAUSA19066: Studium polymerních memristorů založených na metakrylátových polymerech s karbazolovými bočními skupinami</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Chemistry Chemical Physics

ISSN

1463-9076

e-ISSN

1463-9084

Svazek periodika

24

Číslo periodika v rámci svazku

42

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

25999-26010

Kód UT WoS článku

000870311300001

EID výsledku v databázi Scopus

2-s2.0-85141580210