On the intermolecular interactions in thiophene-cored single-stacking junctions
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389013%3A_____%2F23%3A00574968" target="_blank" >RIV/61389013:_____/23:00574968 - isvavai.cz</a>
Výsledek na webu
<a href="https://www.mdpi.com/1422-0067/24/17/13349" target="_blank" >https://www.mdpi.com/1422-0067/24/17/13349</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/ijms241713349" target="_blank" >10.3390/ijms241713349</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
On the intermolecular interactions in thiophene-cored single-stacking junctions
Popis výsledku v původním jazyce
There have been attempts, both experimental and based on density-functional theory (DFT) modeling, at understanding the factors that govern the electronic conductance behavior of single-stacking junctions formed by pi-conjugated materials in nanogaps. Here, a reliable description of relevant stacked configurations of some thiophene-cored systems is provided by means of high-level quantum chemical approaches. The minimal structures of these configurations, which are found using the dispersion-corrected DFT approach, are employed in calculations that apply the coupled cluster method with singles, doubles and perturbative triples [CCSD(T)] and extrapolations to the complete basis set (CBS) limit in order to reliably quantify the strength of intermolecular binding, while their physical origin is investigated using the DFT-based symmetry-adapted perturbation theory (SAPT) of intermolecular interactions. In particular, for symmetrized S-Tn dimers (where “S” and “T” denote a thiomethyl-containing anchor group and a thiophene segment comprising “n” units, respectively), the CCSD(T)/CBS interaction energies are found to increase linearly with n ≤ 6, and significant conformational differences between the flanking 2-thiophene group in S-T1 and S-T2 are described by the CCSD(T)/CBS and SAPT/CBS computations. These results are put into the context of previous work on charge transport properties of S-Tn and other types of supramolecular junctions.n
Název v anglickém jazyce
On the intermolecular interactions in thiophene-cored single-stacking junctions
Popis výsledku anglicky
There have been attempts, both experimental and based on density-functional theory (DFT) modeling, at understanding the factors that govern the electronic conductance behavior of single-stacking junctions formed by pi-conjugated materials in nanogaps. Here, a reliable description of relevant stacked configurations of some thiophene-cored systems is provided by means of high-level quantum chemical approaches. The minimal structures of these configurations, which are found using the dispersion-corrected DFT approach, are employed in calculations that apply the coupled cluster method with singles, doubles and perturbative triples [CCSD(T)] and extrapolations to the complete basis set (CBS) limit in order to reliably quantify the strength of intermolecular binding, while their physical origin is investigated using the DFT-based symmetry-adapted perturbation theory (SAPT) of intermolecular interactions. In particular, for symmetrized S-Tn dimers (where “S” and “T” denote a thiomethyl-containing anchor group and a thiophene segment comprising “n” units, respectively), the CCSD(T)/CBS interaction energies are found to increase linearly with n ≤ 6, and significant conformational differences between the flanking 2-thiophene group in S-T1 and S-T2 are described by the CCSD(T)/CBS and SAPT/CBS computations. These results are put into the context of previous work on charge transport properties of S-Tn and other types of supramolecular junctions.n
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10404 - Polymer science
Návaznosti výsledku
Projekt
<a href="/cs/project/GA20-01233S" target="_blank" >GA20-01233S: Racionální design pokročilých měkkých funkčních materiálů řízený pokročilou NMR spektroskopií pevného stavu a vysoce výkonnou elektronovou mikroskopií</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2023
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
International Journal of Molecular Sciences
ISSN
1422-0067
e-ISSN
1422-0067
Svazek periodika
24
Číslo periodika v rámci svazku
17
Stát vydavatele periodika
CH - Švýcarská konfederace
Počet stran výsledku
14
Strana od-do
13349
Kód UT WoS článku
001060630900001
EID výsledku v databázi Scopus
2-s2.0-85170277236