EUV radiation from nitrogen capillary discharge

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F14%3A00431262" target="_blank" >RIV/61389021:_____/14:00431262 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1142/S2010194514603299" target="_blank" >http://dx.doi.org/10.1142/S2010194514603299</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1142/S2010194514603299" target="_blank" >10.1142/S2010194514603299</a>

Jazyk výsledku

angličtina

Název v původním jazyce

EUV radiation from nitrogen capillary discharge

Popis výsledku v původním jazyce

In the last decade EUV sources attract interest from researchers over the world. One of the main motivations is EUV lithography, which could lead to further miniaturization in electronics. Nitrogen recombination laser at wavelength of 13.4 nm based on capillary discharge Z-pinch configuration could be used in experiments with testing of resolution of photoresist for EUV lithography (close to wavelength of 13.5 nm Si/Mo multilayer mirrors have a high reflectivity at normal incidence angles). In this work,pinching of nitrogen-filled capillary discharge is studied for the development of EUV laser,which is based on recombination pumping scheme.The goal of this study is achieving the required plasma conditions using a capillary discharge Z-pinch apparatus.In experiments with nitrogen,the capillary length was shortened from 232 mm to 90 mm and current quarter-period was changed from 60 ns to 50 ns in contrast with early experiments with Ne-like argon laser.EUV radiation from capillary

Název v anglickém jazyce

EUV radiation from nitrogen capillary discharge

Popis výsledku anglicky

In the last decade EUV sources attract interest from researchers over the world. One of the main motivations is EUV lithography, which could lead to further miniaturization in electronics. Nitrogen recombination laser at wavelength of 13.4 nm based on capillary discharge Z-pinch configuration could be used in experiments with testing of resolution of photoresist for EUV lithography (close to wavelength of 13.5 nm Si/Mo multilayer mirrors have a high reflectivity at normal incidence angles). In this work,pinching of nitrogen-filled capillary discharge is studied for the development of EUV laser,which is based on recombination pumping scheme.The goal of this study is achieving the required plasma conditions using a capillary discharge Z-pinch apparatus.In experiments with nitrogen,the capillary length was shortened from 232 mm to 90 mm and current quarter-period was changed from 60 ns to 50 ns in contrast with early experiments with Ne-like argon laser.EUV radiation from capillary

Druh

D - Stať ve sborníku

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

—

Projekt

<a href="/cs/project/LG13029" target="_blank" >LG13029: Výzkum v rámci Mezinárodního centra hustého magnetizovaného plazmatu</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

International Journal of Modern Physics: Conference Series

ISBN

—

ISSN

2010-1945

e-ISSN

—

Počet stran výsledku

7

Strana od-do

"1460329-1 "-"1460329-7"

Název nakladatele

World Scientific Publishing Co

Místo vydání

Singapore

Místo konání akce

Singapore

Datum konání akce

4. 12. 2013

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—