Identification of microscopic domain wall motion from temperature dependence of nonlinear dielectric response.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F17%3A00479363" target="_blank" >RIV/61389021:_____/17:00479363 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4981874" target="_blank" >http://dx.doi.org/10.1063/1.4981874</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4981874" target="_blank" >10.1063/1.4981874</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Identification of microscopic domain wall motion from temperature dependence of nonlinear dielectric response.

Popis výsledku v původním jazyce

It is known that the permittivity of ferroelectric polydomain films and single crystals in weak electric fields is strongly enhanced by the reversible movement of pinned domain walls. Two mechanisms of the movement exist: first, the bending of free segments of the domain wall and second the planar movement of the domain wall as a whole. In this work, we theoretically demonstrate that it is possible to determine the dominant mechanism of the reversible domain wall movement by means of a temperature measurement of a nonlinear macroscopic dielectric response. In addition, we demonstrate that using this approach, it is possible to obtain quantitative information on the microscopic distribution of the pinning centers. Thus, we suggest that this concept may serve as a simple and useful characterisation tool in the process of development of high-permittivity materials.

Název v anglickém jazyce

Identification of microscopic domain wall motion from temperature dependence of nonlinear dielectric response.

Popis výsledku anglicky

It is known that the permittivity of ferroelectric polydomain films and single crystals in weak electric fields is strongly enhanced by the reversible movement of pinned domain walls. Two mechanisms of the movement exist: first, the bending of free segments of the domain wall and second the planar movement of the domain wall as a whole. In this work, we theoretically demonstrate that it is possible to determine the dominant mechanism of the reversible domain wall movement by means of a temperature measurement of a nonlinear macroscopic dielectric response. In addition, we demonstrate that using this approach, it is possible to obtain quantitative information on the microscopic distribution of the pinning centers. Thus, we suggest that this concept may serve as a simple and useful characterisation tool in the process of development of high-permittivity materials.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GA14-32228S" target="_blank" >GA14-32228S: Digitální holografická tomografie feroelektrických doménových stěn</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Svazek periodika

110

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

—

Kód UT WoS článku

000399984200045

EID výsledku v databázi Scopus

2-s2.0-85018500581