Reactions of silicon carbide in water-stabilized plasma

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F24%3A00616851" target="_blank" >RIV/61389021:_____/24:00616851 - isvavai.cz</a>

Výsledek na webu

<a href="https://webadmin.icct.cz/Amca-ICCT/media/content/2024/documents/Book_of_abstracts_-ICCT2024.pdf" target="_blank" >https://webadmin.icct.cz/Amca-ICCT/media/content/2024/documents/Book_of_abstracts_-ICCT2024.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Reactions of silicon carbide in water-stabilized plasma

Popis výsledku v původním jazyce

SiC silicon carbide has a set of extreme physicochemical properties that predispose it to applications in almost all industries. At normal or slightly elevated temperatures it is used in engineering as a grinding or machining material, it is used in optics, electronics, electrical engineering, etc. Its high corrosion resistance and especially its radiation stability are also used in the construction of equipment in contact with nuclear fuel or directly in nuclear reactors. However, the behaviour at extremely high temperatures is problematic, with oxidation, phase or structural transformations and incongruent thermal decomposition (which may have been one of the causes of the Fukushima nuclear accident). However, published data on these quantities are highly inconsistent, as the study of materials at temperatures above 3000 K is experimentally difficult. In this paper, the behaviour of SiC in a plasma generated in a hybrid water-stabilised WSP®-H 500 plasma torch is described, which can reach temperatures up to 25 000 K at its output. The products formed in air or nitrogen protective atmosphere during plasma deposition of powdered SiC on graphite substrates are described and studied. As a partial result, it is possible to clarify the differences between passive and active oxidation of SiC, justified in the literature by the existence of volatile and unstable SiO molecules.

Název v anglickém jazyce

Reactions of silicon carbide in water-stabilized plasma

Popis výsledku anglicky

SiC silicon carbide has a set of extreme physicochemical properties that predispose it to applications in almost all industries. At normal or slightly elevated temperatures it is used in engineering as a grinding or machining material, it is used in optics, electronics, electrical engineering, etc. Its high corrosion resistance and especially its radiation stability are also used in the construction of equipment in contact with nuclear fuel or directly in nuclear reactors. However, the behaviour at extremely high temperatures is problematic, with oxidation, phase or structural transformations and incongruent thermal decomposition (which may have been one of the causes of the Fukushima nuclear accident). However, published data on these quantities are highly inconsistent, as the study of materials at temperatures above 3000 K is experimentally difficult. In this paper, the behaviour of SiC in a plasma generated in a hybrid water-stabilised WSP®-H 500 plasma torch is described, which can reach temperatures up to 25 000 K at its output. The products formed in air or nitrogen protective atmosphere during plasma deposition of powdered SiC on graphite substrates are described and studied. As a partial result, it is possible to clarify the differences between passive and active oxidation of SiC, justified in the literature by the existence of volatile and unstable SiO molecules.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20506 - Coating and films

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů