Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F24%3A00617093" target="_blank" >RIV/61389021:_____/24:00617093 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1134/S1027451024700319" target="_blank" >https://link.springer.com/article/10.1134/S1027451024700319</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1027451024700319" target="_blank" >10.1134/S1027451024700319</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide

Popis výsledku v původním jazyce

Abstract: A hybrid multiscale model consisting of two coupled modules is used to study the effect of irradiation temperature on the kinetics of the formation of swift heavy ions tracks in silicon carbide (6H-SiC). Excitation of the electronic and atomic subsystems of the material is simulated using the Monte Carlo TREKIS-3 code. The profile of energy transferred to the atomic lattice is used as the initial conditions for molecular-dynamics simulations (using the LAMMPS package) of structural changes in the material near the trajectory of the swift heavy ion. Using the example of Bi-ion irradiation with an energy of 710 MeV, it is found that increasing irradiation temperature leads to an increase in the energy density transferred to the lattice. This induces rapid disordering of the core structure of the track at timescales on the order of 0.25 ps. At irradiation temperatures below 1800 K, subsequent recrystallization of the amorphous region within the cooling track leads to complete restoration of the material structure. At temperatures above the threshold of 1800 K, mass transfer, determined by the ejection of dislocations from the track core, results in the formation of nanoscale voids with a diameter of approximately 3 nm along the ion trajectory. The simulation results are useful for assessing the radiation resistance of silicon carbide under extreme irradiation conditions and for formulating ideas and designing new experiments on high-temperature SiC irradiation.

Název v anglickém jazyce

Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide

Popis výsledku anglicky

Abstract: A hybrid multiscale model consisting of two coupled modules is used to study the effect of irradiation temperature on the kinetics of the formation of swift heavy ions tracks in silicon carbide (6H-SiC). Excitation of the electronic and atomic subsystems of the material is simulated using the Monte Carlo TREKIS-3 code. The profile of energy transferred to the atomic lattice is used as the initial conditions for molecular-dynamics simulations (using the LAMMPS package) of structural changes in the material near the trajectory of the swift heavy ion. Using the example of Bi-ion irradiation with an energy of 710 MeV, it is found that increasing irradiation temperature leads to an increase in the energy density transferred to the lattice. This induces rapid disordering of the core structure of the track at timescales on the order of 0.25 ps. At irradiation temperatures below 1800 K, subsequent recrystallization of the amorphous region within the cooling track leads to complete restoration of the material structure. At temperatures above the threshold of 1800 K, mass transfer, determined by the ejection of dislocations from the track core, results in the formation of nanoscale voids with a diameter of approximately 3 nm along the ion trajectory. The simulation results are useful for assessing the radiation resistance of silicon carbide under extreme irradiation conditions and for formulating ideas and designing new experiments on high-temperature SiC irradiation.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques

ISSN

1027-4510

e-ISSN

1819-7094

Svazek periodika

18

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

RU - Ruská federace

Počet stran výsledku

7

Strana od-do

683-689

Kód UT WoS článku

001277999100006

EID výsledku v databázi Scopus

2-s2.0-85198657720