Bandgap engineering and modulation of thermodynamic, and optical properties of III-N monolayers XN (X=In, Ga & Al) by mutual alloying

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61988987%3A17310%2F22%3AA2302FTT" target="_blank" >RIV/61988987:17310/22:A2302FTT - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1402-4896/ac8581" target="_blank" >http://dx.doi.org/10.1088/1402-4896/ac8581</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1402-4896/ac8581" target="_blank" >10.1088/1402-4896/ac8581</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Bandgap engineering and modulation of thermodynamic, and optical properties of III-N monolayers XN (X=In, Ga & Al) by mutual alloying

Popis výsledku v původním jazyce

We investigated the structural, thermodynamic, and optoelectronic properties of InxAl1-xN, InxGa1-xN, and GaxAl1-xN alloys for x = 0.25, 0.50 and 0.75. The optimized lattice constants showed nearly a small deviation trend from Vegard's law with composition x. The impact of mutual alloying is evaluated in terms of enthalpy and interaction parameters. The calculated electronic band structures and density of states lie in the bandgap ranges from 1.09 eV to 2.72 eV for composition x 0.25 to 0.75. These electronic properties suggested that alloys are suitable bandgap semiconductors with large variations in their bandgap energies for optoelectronic applications. The optical properties are calculated using the dielectric constant and correlated with the calculated electronic band structures. The main reflectivity peak and absorption coefficient showed a significant shift with increasing x. These monolayers' suitable bandgap and optoelectronic properties make them attractive for optoelectronic applications, including photovoltaics and photodetectors.

Název v anglickém jazyce

Bandgap engineering and modulation of thermodynamic, and optical properties of III-N monolayers XN (X=In, Ga & Al) by mutual alloying

Popis výsledku anglicky

We investigated the structural, thermodynamic, and optoelectronic properties of InxAl1-xN, InxGa1-xN, and GaxAl1-xN alloys for x = 0.25, 0.50 and 0.75. The optimized lattice constants showed nearly a small deviation trend from Vegard's law with composition x. The impact of mutual alloying is evaluated in terms of enthalpy and interaction parameters. The calculated electronic band structures and density of states lie in the bandgap ranges from 1.09 eV to 2.72 eV for composition x 0.25 to 0.75. These electronic properties suggested that alloys are suitable bandgap semiconductors with large variations in their bandgap energies for optoelectronic applications. The optical properties are calculated using the dielectric constant and correlated with the calculated electronic band structures. The main reflectivity peak and absorption coefficient showed a significant shift with increasing x. These monolayers' suitable bandgap and optoelectronic properties make them attractive for optoelectronic applications, including photovoltaics and photodetectors.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Scripta

ISSN

0031-8949

e-ISSN

1402-4896

Svazek periodika

—

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

—

Kód UT WoS článku

000839409300001

EID výsledku v databázi Scopus

2-s2.0-85136065547