Composites g-C3N4 and BiOIO3 for photocatalytic decomposition of N2O
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27360%2F19%3A10242038" target="_blank" >RIV/61989100:27360/19:10242038 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/61989100:27710/19:10242038 RIV/44555601:13440/19:43894638
Výsledek na webu
<a href="https://www.sciencedirect.com/science/article/pii/S1369800119301568" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369800119301568</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mssp.2019.04.036" target="_blank" >10.1016/j.mssp.2019.04.036</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Composites g-C3N4 and BiOIO3 for photocatalytic decomposition of N2O
Popis výsledku v původním jazyce
The composites of graphitic carbon nitride (g-C3N4) and BiOIO3 with different weight ratios of both components (1:1, 2:1, 4:1 and 6:1) were prepared by heating of their mechanical mixtures. Bismuth iodate was prepared by hydrothermal treatment of aqueous solutions of Bi(NO3)3.5H2O and I2O5. Pure g-C3N4 was prepared by thermal polycondenzation of melamine at 620C. All of the samples were characterized using X-ray powder diffraction (XRPD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), UV-VIS diffuse reflectance spectroscopy (DRS), photoluminescence (PL) spectroscopy, X-ray photoelectron (XPS) and Fourier transformed infrared (FTIR) spectroscopy. The measurement of photocurrents was used for the study of photogenerated charge carriers and nitrogen physisorption for the evaluation of specific surface area (SSA) and pore size distribution of the samples. The photodegradation activity of the samples was tested by the UVA light photocatalytic decomposition of N2O. The highest photodegradation activity was observed for the 1:1 composite, which was 2 and 2.5 times higher in comparison to pure BiOIO3 and g-C3N4, respectively. The enhanced photocatalytic activity was explained by a significant reduction of charge carriers' recombination due to the formation of a heterojunction between g-C3N4 and BiOIO3.
Název v anglickém jazyce
Composites g-C3N4 and BiOIO3 for photocatalytic decomposition of N2O
Popis výsledku anglicky
The composites of graphitic carbon nitride (g-C3N4) and BiOIO3 with different weight ratios of both components (1:1, 2:1, 4:1 and 6:1) were prepared by heating of their mechanical mixtures. Bismuth iodate was prepared by hydrothermal treatment of aqueous solutions of Bi(NO3)3.5H2O and I2O5. Pure g-C3N4 was prepared by thermal polycondenzation of melamine at 620C. All of the samples were characterized using X-ray powder diffraction (XRPD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), UV-VIS diffuse reflectance spectroscopy (DRS), photoluminescence (PL) spectroscopy, X-ray photoelectron (XPS) and Fourier transformed infrared (FTIR) spectroscopy. The measurement of photocurrents was used for the study of photogenerated charge carriers and nitrogen physisorption for the evaluation of specific surface area (SSA) and pore size distribution of the samples. The photodegradation activity of the samples was tested by the UVA light photocatalytic decomposition of N2O. The highest photodegradation activity was observed for the 1:1 composite, which was 2 and 2.5 times higher in comparison to pure BiOIO3 and g-C3N4, respectively. The enhanced photocatalytic activity was explained by a significant reduction of charge carriers' recombination due to the formation of a heterojunction between g-C3N4 and BiOIO3.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
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OECD FORD obor
20505 - Composites (including laminates, reinforced plastics, cermets, combined natural and synthetic fibre fabrics; filled composites)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2019
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Materials Science in Semiconductor Processing
ISSN
1369-8001
e-ISSN
—
Svazek periodika
100
Číslo periodika v rámci svazku
September 2019
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
10
Strana od-do
113-122
Kód UT WoS článku
000470108600016
EID výsledku v databázi Scopus
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