Mueller matrix ellipsometric study of multilayer spin-VCSEL structures with local optical anisotropy
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F18%3A10238972" target="_blank" >RIV/61989100:27640/18:10238972 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/61989100:27740/18:10238972
Výsledek na webu
<a href="https://aip.scitation.org/doi/10.1063/1.5009411" target="_blank" >https://aip.scitation.org/doi/10.1063/1.5009411</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5009411" target="_blank" >10.1063/1.5009411</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Mueller matrix ellipsometric study of multilayer spin-VCSEL structures with local optical anisotropy
Popis výsledku v původním jazyce
Spin-laser structures such as spin-polarized vertical-cavity surface-emitting lasers are semiconductor devices in which the radiative recombination processes involving spin-polarized carriers result in an emission of circularly polarized photons. Nevertheless, additional linear in-plane anisotropies in the cavity, e.g., interfacial and surface anisotropies, generally lead to preferential linearly polarized laser emission and to possible coupling between modes. We present Mueller matrix ellipsometric study of non-intentionally doped InGaAs/GaAsP laser structures devoted for optical pumping operations in the spectral range from 0.73 to 6.4eV in order to disentangle surface and quantum wells contributions to the linear optical birefringence of the structures. The measurement of full 4 x 4 Mueller matrix for multiple angles of incidence and in-plane azimuthal angles in combination with proper parametrization of optical functions has been used for extraction of optical permittivity tensor components along [110] and [1-10] crystal axis of surface strained layers and quantum wells grown on [001]-substrate. Such spectral dependence of optical tensor elements is crucial for modeling of spin-laser eigenmodes, resonance conditions, and also for understanding of sources of structure anisotropies.
Název v anglickém jazyce
Mueller matrix ellipsometric study of multilayer spin-VCSEL structures with local optical anisotropy
Popis výsledku anglicky
Spin-laser structures such as spin-polarized vertical-cavity surface-emitting lasers are semiconductor devices in which the radiative recombination processes involving spin-polarized carriers result in an emission of circularly polarized photons. Nevertheless, additional linear in-plane anisotropies in the cavity, e.g., interfacial and surface anisotropies, generally lead to preferential linearly polarized laser emission and to possible coupling between modes. We present Mueller matrix ellipsometric study of non-intentionally doped InGaAs/GaAsP laser structures devoted for optical pumping operations in the spectral range from 0.73 to 6.4eV in order to disentangle surface and quantum wells contributions to the linear optical birefringence of the structures. The measurement of full 4 x 4 Mueller matrix for multiple angles of incidence and in-plane azimuthal angles in combination with proper parametrization of optical functions has been used for extraction of optical permittivity tensor components along [110] and [1-10] crystal axis of surface strained layers and quantum wells grown on [001]-substrate. Such spectral dependence of optical tensor elements is crucial for modeling of spin-laser eigenmodes, resonance conditions, and also for understanding of sources of structure anisotropies.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10306 - Optics (including laser optics and quantum optics)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Applied Physics Letters
ISSN
0003-6951
e-ISSN
—
Svazek periodika
112
Číslo periodika v rámci svazku
22
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
6
Strana od-do
221106
Kód UT WoS článku
000433963500006
EID výsledku v databázi Scopus
2-s2.0-85048049670