Modulating p-type doping of two dimensional material palladium diselenide

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F23%3A10253969" target="_blank" >RIV/61989100:27710/23:10253969 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s12274-023-6196-7" target="_blank" >https://link.springer.com/article/10.1007/s12274-023-6196-7</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s12274-023-6196-7" target="_blank" >10.1007/s12274-023-6196-7</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Modulating p-type doping of two dimensional material palladium diselenide

Popis výsledku v původním jazyce

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies. Group-10 noble metal dichalcogenides (e.g., PtS2, PtSe2, PdS2, and PdSe2) have been listed into two-dimensional (2D) materials toolkit to assemble van der Waals heterostructures. Among them, PdSe2 demonstrates advantages of high stability in air, high mobility, and wide tunable bandgap. However, the regulation of p-type doping of PdSe2 remains unsolved problem prior to fabricating p-n junction as a fundamental platform of semiconductor physics. Besides, a quantitative method for the controllable doping of PdSe2 is yet to be reported. In this study, the doping level of PdSe2 was correlated with the concentration of Lewis acids, for example, SnCl4, used for soaking. Considering the transfer characteristics, the threshold voltage (the gate voltage corresponding to the minimum drain current) increased after SnCl4 soaking treatment. PdSe2 transistors were soaked in SnCl4 solutions with five different concentrations. The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation. This study provides in-depth insights into the controllable p-type doping of PdSe2. It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

Název v anglickém jazyce

Modulating p-type doping of two dimensional material palladium diselenide

Popis výsledku anglicky

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies. Group-10 noble metal dichalcogenides (e.g., PtS2, PtSe2, PdS2, and PdSe2) have been listed into two-dimensional (2D) materials toolkit to assemble van der Waals heterostructures. Among them, PdSe2 demonstrates advantages of high stability in air, high mobility, and wide tunable bandgap. However, the regulation of p-type doping of PdSe2 remains unsolved problem prior to fabricating p-n junction as a fundamental platform of semiconductor physics. Besides, a quantitative method for the controllable doping of PdSe2 is yet to be reported. In this study, the doping level of PdSe2 was correlated with the concentration of Lewis acids, for example, SnCl4, used for soaking. Considering the transfer characteristics, the threshold voltage (the gate voltage corresponding to the minimum drain current) increased after SnCl4 soaking treatment. PdSe2 transistors were soaked in SnCl4 solutions with five different concentrations. The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation. This study provides in-depth insights into the controllable p-type doping of PdSe2. It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21000 - Nano-technology

Projekt

<a href="/cs/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institut environmentálních technologií - excelentní výzkum</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nano Research

ISSN

1998-0124

e-ISSN

1998-0000

Svazek periodika

2023

Číslo periodika v rámci svazku

November 2023

Stát vydavatele periodika

CN - Čínská lidová republika

Počet stran výsledku

13

Strana od-do

1-13

Kód UT WoS článku

001116536900002

EID výsledku v databázi Scopus

2-s2.0-85178262279