Temperature Dependence of Charge Transport Properties of Quasi-2D Chiral Perovskite Thin-Film Field-Effect Transistors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F24%3A10254883" target="_blank" >RIV/61989100:27740/24:10254883 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acsami.3c19200" target="_blank" >https://pubs.acs.org/doi/10.1021/acsami.3c19200</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.3c19200" target="_blank" >10.1021/acsami.3c19200</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature Dependence of Charge Transport Properties of Quasi-2D Chiral Perovskite Thin-Film Field-Effect Transistors

Popis výsledku v původním jazyce

Chiral halide perovskite materials promise both superior light response and the capability to distinguish circularly polarized emissions, which are especially common in the fluorescence spectra of organic chiral materials. Herein, thin-film field-effect transistors (FETs) based on chiral quasi-two-dimensional perovskites are explored, and the temperature dependence of the charge carrier transport mechanism over the broad temperature range (80-300 K) is revealed. A typical p-type charge transport behavior is observed for both left-handed (S-C6H5(CN2)2NH3)2(CH3NH3)nMINUS SIGN 1PbnI3n+1 and right-handed (R-C6H5(CN2)2NH3)2(CH3NH3)nMINUS SIGN 1PbnI3n+1 chiral perovskites, with maximum carrier mobilities of 1.7 x 10-5 cm2 V-1 s-1 and 2.5 x 10-5 cm2 V-1 s-1 at around 280 K, respectively. The shallow traps with smaller activation energy (0.03 eV) hinder the carrier transport over the lower temperature regime (80-180 K), while deep traps with 1 order of magnitude larger activation energy than the shallow traps moderate the charge carrier transport in the temperature range of 180-300 K. From the charge carrier mechanism point of view, impurity scattering is established as the dominant factor from 80 K until around 280 K, while phonon scattering becomes predominant up to room temperature. Responsivities of 0.15 A W-1 and 0.14 A W-1 for left-handed and right-handed chiral perovskite FET devices are obtained.

Název v anglickém jazyce

Temperature Dependence of Charge Transport Properties of Quasi-2D Chiral Perovskite Thin-Film Field-Effect Transistors

Popis výsledku anglicky

Chiral halide perovskite materials promise both superior light response and the capability to distinguish circularly polarized emissions, which are especially common in the fluorescence spectra of organic chiral materials. Herein, thin-film field-effect transistors (FETs) based on chiral quasi-two-dimensional perovskites are explored, and the temperature dependence of the charge carrier transport mechanism over the broad temperature range (80-300 K) is revealed. A typical p-type charge transport behavior is observed for both left-handed (S-C6H5(CN2)2NH3)2(CH3NH3)nMINUS SIGN 1PbnI3n+1 and right-handed (R-C6H5(CN2)2NH3)2(CH3NH3)nMINUS SIGN 1PbnI3n+1 chiral perovskites, with maximum carrier mobilities of 1.7 x 10-5 cm2 V-1 s-1 and 2.5 x 10-5 cm2 V-1 s-1 at around 280 K, respectively. The shallow traps with smaller activation energy (0.03 eV) hinder the carrier transport over the lower temperature regime (80-180 K), while deep traps with 1 order of magnitude larger activation energy than the shallow traps moderate the charge carrier transport in the temperature range of 180-300 K. From the charge carrier mechanism point of view, impurity scattering is established as the dominant factor from 80 K until around 280 K, while phonon scattering becomes predominant up to room temperature. Responsivities of 0.15 A W-1 and 0.14 A W-1 for left-handed and right-handed chiral perovskite FET devices are obtained.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS applied materials &amp; interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

16

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

12965-12973

Kód UT WoS článku

001177543400001

EID výsledku v databázi Scopus

2-s2.0-85186452021