Tuning the properties of erbium oxide through manganese doping for enhanced optoelectronic performance

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F25%3A10259595" target="_blank" >RIV/61989100:27740/25:10259595 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s10854-025-16188-7?utm_source=getftr&utm_medium=getftr&utm_campaign=getftr_pilot&getft_integrator=scopus" target="_blank" >https://link.springer.com/article/10.1007/s10854-025-16188-7?utm_source=getftr&utm_medium=getftr&utm_campaign=getftr_pilot&getft_integrator=scopus</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-025-16188-7" target="_blank" >10.1007/s10854-025-16188-7</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tuning the properties of erbium oxide through manganese doping for enhanced optoelectronic performance

Popis výsledku v původním jazyce

Researchers are increasingly drawn to erbium oxide (Er2O3) nanoparticles because of their attractive properties, which include luminescence, high electron mobility, optical band gap, and exceptional transparency. These qualities make them a potential choice for a range of optoelectronic applications. Using the solid-state reaction technique, it is possible to produce erbium oxide nanoparticles, both undoped and doped with 1-5% manganese (Mn). This investigation compares undoped and Mn-doped Er2O3 nanoparticles with respect to their optical, electrical, and magnetic properties. The X-ray diffraction pattern shows that the Er2O3 nanoparticles made with 5% Mn doping have a cubic crystal structure, the biggest crystallite size (60.90 nm), and less microstrain. The FTIR spectrum shows peaks at 417 cm-1 and 433 cm-1 for the Er-O stretching vibrations and at 461 cm-1 and 500 cm-1 for the Mn-O bond. The direct energy band gap for Er2O3 nanoparticles that are doped with 0-5% manganese content is confirmed by UV visible examination. As a consequence of electron-hole pair recombination, photoluminescence (PL) spectra show several emission peaks in the visible spectrum. According to the Raman investigation, the insertion of manganese into Er2O3 maintains the cubic phase while causing a modest modification to the local bonding conditions. This is demonstrated by the fact that the Tg and Eg vibrational modes remain stable. At 5% Mn doping, the magnetic study of Er2O3 nanoparticles reveals the maximum saturation magnetization of 2.686 emu/g. The highest conductivity of Er2O3 nanoparticles is observed at a doping level of 5%, while the lowest conductivity is observed at a doping level of 2%, according to electrical properties. Furthermore, it has been discovered that the work function for erbium oxide nanoparticles doped with 0 to 5 percent manganese is between 5.375 and 5.56 electron volts. The results of the study indicate that by eliminating surface imperfections, minor Mn doping in Er2O3 improves stability and raises the work function. However, greater Mn concentrations cause more defects, which may impair work function by donating electrons. This study shows that controlled Mn doping in Er2O3 nanoparticles tunes their band gap, enhances photoluminescence, and induces ferromagnetism, demonstrating their multifunctionality for optoelectronic devices. In light of all of these considerations, Mn-doped Er2O3 nanoparticles show considerable potential as a material for a range of optoelectronic applications.

Název v anglickém jazyce

Tuning the properties of erbium oxide through manganese doping for enhanced optoelectronic performance

Popis výsledku anglicky

Researchers are increasingly drawn to erbium oxide (Er2O3) nanoparticles because of their attractive properties, which include luminescence, high electron mobility, optical band gap, and exceptional transparency. These qualities make them a potential choice for a range of optoelectronic applications. Using the solid-state reaction technique, it is possible to produce erbium oxide nanoparticles, both undoped and doped with 1-5% manganese (Mn). This investigation compares undoped and Mn-doped Er2O3 nanoparticles with respect to their optical, electrical, and magnetic properties. The X-ray diffraction pattern shows that the Er2O3 nanoparticles made with 5% Mn doping have a cubic crystal structure, the biggest crystallite size (60.90 nm), and less microstrain. The FTIR spectrum shows peaks at 417 cm-1 and 433 cm-1 for the Er-O stretching vibrations and at 461 cm-1 and 500 cm-1 for the Mn-O bond. The direct energy band gap for Er2O3 nanoparticles that are doped with 0-5% manganese content is confirmed by UV visible examination. As a consequence of electron-hole pair recombination, photoluminescence (PL) spectra show several emission peaks in the visible spectrum. According to the Raman investigation, the insertion of manganese into Er2O3 maintains the cubic phase while causing a modest modification to the local bonding conditions. This is demonstrated by the fact that the Tg and Eg vibrational modes remain stable. At 5% Mn doping, the magnetic study of Er2O3 nanoparticles reveals the maximum saturation magnetization of 2.686 emu/g. The highest conductivity of Er2O3 nanoparticles is observed at a doping level of 5%, while the lowest conductivity is observed at a doping level of 2%, according to electrical properties. Furthermore, it has been discovered that the work function for erbium oxide nanoparticles doped with 0 to 5 percent manganese is between 5.375 and 5.56 electron volts. The results of the study indicate that by eliminating surface imperfections, minor Mn doping in Er2O3 improves stability and raises the work function. However, greater Mn concentrations cause more defects, which may impair work function by donating electrons. This study shows that controlled Mn doping in Er2O3 nanoparticles tunes their band gap, enhances photoluminescence, and induces ferromagnetism, demonstrating their multifunctionality for optoelectronic devices. In light of all of these considerations, Mn-doped Er2O3 nanoparticles show considerable potential as a material for a range of optoelectronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10300 - Physical sciences

Projekt

—

Návaznosti

O - Projekt operacniho programu

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Science: Materials in Electronics

ISSN

0957-4522

e-ISSN

1573-482X

Svazek periodika

36

Číslo periodika v rámci svazku

34

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

23

Strana od-do

2210

Kód UT WoS článku

001630170200001

EID výsledku v databázi Scopus

2-s2.0-105023569137