Low-Temperature Synthesis and Characterization of Gallium Nitride Quantum Dots in Ordered Mesoporous Silica

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15310%2F12%3A33141779" target="_blank" >RIV/61989592:15310/12:33141779 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/jp208011y" target="_blank" >http://dx.doi.org/10.1021/jp208011y</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/jp208011y" target="_blank" >10.1021/jp208011y</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Low-Temperature Synthesis and Characterization of Gallium Nitride Quantum Dots in Ordered Mesoporous Silica

Popis výsledku v původním jazyce

Semiconducting gallium nitride (GaN) quantum dots (QDs) were synthesized at low temperatures (650 degrees C), using ammonia flow without any organogallium precursor compound, assisted and controlled by an ordered mesoporous silica MCM-41 as host matrix.The final materials exhibit an intense blue shift of the band gap energy compared to the three-dimensional (3D) GaN. MCM-41 hosted GaN QD synthesis is also reported from pyrolysis of an organic precursor, tris(dimethylamido)gallium(M), at 365 degrees C under ammonia flow, with the largest band gap blue shift reported for such synthesized GaN of 0.6 eV. The QDs, involving inorganic precursor, exhibit an average X-ray diffraction estimated diameter of 12.6 angstrom and crystallize in the zinc blende lattice with cubic symmetry (beta-GaN), whereas the hexagonal system is thermodynamically preferred. QDs, based on organic precursor, have hexagonal symmetry (alpha-GaN, wurtzite structure) with an average diameter of 20.6 angstrom. Spectrosco

Název v anglickém jazyce

Low-Temperature Synthesis and Characterization of Gallium Nitride Quantum Dots in Ordered Mesoporous Silica

Popis výsledku anglicky

Semiconducting gallium nitride (GaN) quantum dots (QDs) were synthesized at low temperatures (650 degrees C), using ammonia flow without any organogallium precursor compound, assisted and controlled by an ordered mesoporous silica MCM-41 as host matrix.The final materials exhibit an intense blue shift of the band gap energy compared to the three-dimensional (3D) GaN. MCM-41 hosted GaN QD synthesis is also reported from pyrolysis of an organic precursor, tris(dimethylamido)gallium(M), at 365 degrees C under ammonia flow, with the largest band gap blue shift reported for such synthesized GaN of 0.6 eV. The QDs, involving inorganic precursor, exhibit an average X-ray diffraction estimated diameter of 12.6 angstrom and crystallize in the zinc blende lattice with cubic symmetry (beta-GaN), whereas the hexagonal system is thermodynamically preferred. QDs, based on organic precursor, have hexagonal symmetry (alpha-GaN, wurtzite structure) with an average diameter of 20.6 angstrom. Spectrosco

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0058" target="_blank" >ED2.1.00/03.0058: Regionální centrum pokročilých technologií a materiálů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry Part C: Nanomaterials and Interfaces

ISSN

1932-7447

e-ISSN

—

Svazek periodika

116

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

15

Strana od-do

1185-1194

Kód UT WoS článku

000298978700147

EID výsledku v databázi Scopus

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