Solar Transition-Region Lines Observed by the Interface Region Imaging Spectrograph: Diagnostics for the O IV and Si IV Lines
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985815%3A_____%2F14%3A00399493" target="_blank" >RIV/67985815:_____/14:00399493 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1088/2041-8205/780/1/L12" target="_blank" >http://dx.doi.org/10.1088/2041-8205/780/1/L12</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/2041-8205/780/1/L12" target="_blank" >10.1088/2041-8205/780/1/L12</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Solar Transition-Region Lines Observed by the Interface Region Imaging Spectrograph: Diagnostics for the O IV and Si IV Lines
Popis výsledku v původním jazyce
The formation of the transition region O IV and Si IV lines observable by the Interface Region Imaging Spectrograph (IRIS) is investigated for both Maxwellian and non-Maxwellian conditions characterized by a ?-distribution exhibiting a high-energy tail.The Si IV lines are formed at lower temperatures than the O IV lines for all ?. In non-Maxwellian situations with lower ?, the contribution functions are shifted to lower temperatures. Combined with the slope of the differential emission measure, it is possible for the Si IV lines to be formed at very different regions of the solar transition region than the O IV lines; possibly close to the solar chromosphere. Such situations might be discernible by IRIS. It is found that photoexcitation can be important for the Si IV lines, but is negligible for the O IV lines. The usefulness of the O IV ratios for density diagnostics independently of ? is investigated and it is found that the O IV 1404.78 ?/1399.77 ? ratio provides a good density dia
Název v anglickém jazyce
Solar Transition-Region Lines Observed by the Interface Region Imaging Spectrograph: Diagnostics for the O IV and Si IV Lines
Popis výsledku anglicky
The formation of the transition region O IV and Si IV lines observable by the Interface Region Imaging Spectrograph (IRIS) is investigated for both Maxwellian and non-Maxwellian conditions characterized by a ?-distribution exhibiting a high-energy tail.The Si IV lines are formed at lower temperatures than the O IV lines for all ?. In non-Maxwellian situations with lower ?, the contribution functions are shifted to lower temperatures. Combined with the slope of the differential emission measure, it is possible for the Si IV lines to be formed at very different regions of the solar transition region than the O IV lines; possibly close to the solar chromosphere. Such situations might be discernible by IRIS. It is found that photoexcitation can be important for the Si IV lines, but is negligible for the O IV lines. The usefulness of the O IV ratios for density diagnostics independently of ? is investigated and it is found that the O IV 1404.78 ?/1399.77 ? ratio provides a good density dia
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BN - Astronomie a nebeská mechanika, astrofyzika
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/GAP209%2F12%2F1652" target="_blank" >GAP209/12/1652: Analýza netermálních distribucí elektronů ve sluneční koróně a přechodové oblasti</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2014
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Astrophysical Journal Letters
ISSN
2041-8205
e-ISSN
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Svazek periodika
780
Číslo periodika v rámci svazku
1
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
7
Strana od-do
"L12/1"-"L12/7"
Kód UT WoS článku
000328261500012
EID výsledku v databázi Scopus
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