Ytterbium silicide nanostructures prepared by pulsed laser ablation in oven: Structural and electrical characterization.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F19%3A00504351" target="_blank" >RIV/67985858:_____/19:00504351 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/19:00504351

Výsledek na webu

<a href="http://hdl.handle.net/11104/0296006" target="_blank" >http://hdl.handle.net/11104/0296006</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matlet.2019.03.032" target="_blank" >10.1016/j.matlet.2019.03.032</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ytterbium silicide nanostructures prepared by pulsed laser ablation in oven: Structural and electrical characterization.

Popis výsledku v původním jazyce

Ytterbium silicide nanoobjects were synthetized using pulsed laser ablation in an oven at temperatures of 800 and 1000 °C. Ablation of divided target Si/Yb in a flow of Ar resulted in deposits which contained mostly ytterbium silicide nanowires, nanorods and nanoparticles. Single nanoparticles (800 °C) are identical with Yb 3 Si 5 alloy, nanorods possess both a monoclinic phase not corresponding to any known structure in the phase diagram Yb-Si and a face-centered cubic structure close to the pure Yb but with a high Si content. At the temperature of 1000 °C, the studied nanorods and nanowires decorated by nanocrystals are practically amorphous, whereas the structure of those nanocrystals is close to that of the nanorods with the face-centered cubic structure prepared at 800 °C. Nanowire (1000 °C) is a semiconductor with ρ = 132.9 Ω.cm at room temperature, which is comparable to a heavily doped silicon.

Název v anglickém jazyce

Ytterbium silicide nanostructures prepared by pulsed laser ablation in oven: Structural and electrical characterization.

Popis výsledku anglicky

Ytterbium silicide nanoobjects were synthetized using pulsed laser ablation in an oven at temperatures of 800 and 1000 °C. Ablation of divided target Si/Yb in a flow of Ar resulted in deposits which contained mostly ytterbium silicide nanowires, nanorods and nanoparticles. Single nanoparticles (800 °C) are identical with Yb 3 Si 5 alloy, nanorods possess both a monoclinic phase not corresponding to any known structure in the phase diagram Yb-Si and a face-centered cubic structure close to the pure Yb but with a high Si content. At the temperature of 1000 °C, the studied nanorods and nanowires decorated by nanocrystals are practically amorphous, whereas the structure of those nanocrystals is close to that of the nanorods with the face-centered cubic structure prepared at 800 °C. Nanowire (1000 °C) is a semiconductor with ρ = 132.9 Ω.cm at room temperature, which is comparable to a heavily doped silicon.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Letters

ISSN

0167-577X

e-ISSN

—

Svazek periodika

246

Číslo periodika v rámci svazku

JUL 1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

3

Strana od-do

17-19

Kód UT WoS článku

000462761700005

EID výsledku v databázi Scopus

2-s2.0-85062870704