Photolithographic patterning of nanocrystalline europium-titanate Eu2Ti2O7 thin films on silicon substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F17%3A00482085" target="_blank" >RIV/67985882:_____/17:00482085 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081723:_____/17:00482085

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.matlet.2017.08.013" target="_blank" >http://dx.doi.org/10.1016/j.matlet.2017.08.013</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matlet.2017.08.013" target="_blank" >10.1016/j.matlet.2017.08.013</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Photolithographic patterning of nanocrystalline europium-titanate Eu2Ti2O7 thin films on silicon substrates

Popis výsledku v původním jazyce

Patterned highly transparent nanocrystalline europium-titanate Eu2Ti2O7 thin films with tailored structural properties were prepared by a sol-gel approach combined with a photolithography. The amorphous thin films on silicon substrates were prepared by the sol-gel approach. Patterns were written by a photolithography process followed by wet-etching and the samples were thermally annealed forming the pure nanocrystalline phase of Eu2Ti2O7. Written patterns were crack-free and longitudinally homogenous and their lateral dimensions remained unchanged during the annealing. The lowest width of written ribs was 10 mu m. The film thickness was approximately 540 nm and the films consist of uniform nanocrystals of the size approximately 50 nm. The results can be used for preparation of patterned thin films that are suitable for a construction of integrated spintronic devices

Název v anglickém jazyce

Photolithographic patterning of nanocrystalline europium-titanate Eu2Ti2O7 thin films on silicon substrates

Popis výsledku anglicky

Patterned highly transparent nanocrystalline europium-titanate Eu2Ti2O7 thin films with tailored structural properties were prepared by a sol-gel approach combined with a photolithography. The amorphous thin films on silicon substrates were prepared by the sol-gel approach. Patterns were written by a photolithography process followed by wet-etching and the samples were thermally annealed forming the pure nanocrystalline phase of Eu2Ti2O7. Written patterns were crack-free and longitudinally homogenous and their lateral dimensions remained unchanged during the annealing. The lowest width of written ribs was 10 mu m. The film thickness was approximately 540 nm and the films consist of uniform nanocrystals of the size approximately 50 nm. The results can be used for preparation of patterned thin films that are suitable for a construction of integrated spintronic devices

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Letters

ISSN

0167-577X

e-ISSN

—

Svazek periodika

209

Číslo periodika v rámci svazku

December

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

216-219

Kód UT WoS článku

000413124300055

EID výsledku v databázi Scopus

2-s2.0-85026877637