Static Dislocation Interactions in Thin Channels between Cuboidal Particles.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F01%3A07013157" target="_blank" >RIV/68081723:_____/01:07013157 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Static Dislocation Interactions in Thin Channels between Cuboidal Particles.

Popis výsledku v původním jazyce

A discrete dislocation model (DDM) is used to rationalize the stability of interface dislocation configurations in particle strengthened alloys with microstructures like those found in single crystal superalloys, where large cubes of ordered .gamma.'-phase (1 .mu.m) are separated by thin .gamma.-channels (0.1 .mu.m). The model combines three elements which contribute to the overall stress state: (i) external constant applied stress, (ii) coherency stresses (due to a misfit between matrix and particle)and (iii) stresses associated with dislocations. Peach-Koehler forces on interface dislocations are calculated based on this overall stress state. The calculations are performed using a 2D model for a <110>-projection of the overall microstructural scenario. The stability of simple dislocation arrays at the .gamma./.gamma.'-interface is studied considering the interaction of two octahedral slip systems in the thin .gamma.-channels. As compared to the case where only one octahedral slip

Název v anglickém jazyce

Static Dislocation Interactions in Thin Channels between Cuboidal Particles.

Popis výsledku anglicky

A discrete dislocation model (DDM) is used to rationalize the stability of interface dislocation configurations in particle strengthened alloys with microstructures like those found in single crystal superalloys, where large cubes of ordered .gamma.'-phase (1 .mu.m) are separated by thin .gamma.-channels (0.1 .mu.m). The model combines three elements which contribute to the overall stress state: (i) external constant applied stress, (ii) coherency stresses (due to a misfit between matrix and particle)and (iii) stresses associated with dislocations. Peach-Koehler forces on interface dislocations are calculated based on this overall stress state. The calculations are performed using a 2D model for a <110>-projection of the overall microstructural scenario. The stability of simple dislocation arrays at the .gamma./.gamma.'-interface is studied considering the interaction of two octahedral slip systems in the thin .gamma.-channels. As compared to the case where only one octahedral slip

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/OC%20P3.50" target="_blank" >OC P3.50: Anisotropie creepu v heterogenních materiálech</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2001

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science and Engineering. A

ISSN

0921-5093

e-ISSN

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Svazek periodika

309-310

Číslo periodika v rámci svazku

N/A

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

278-282

Kód UT WoS článku

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EID výsledku v databázi Scopus

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