Pulsed laser deposition of pure and Pr doped Ge-Ga-Se amourphous chalcogenide films.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F00%3AME322C4" target="_blank" >RIV/68378271:_____/00:ME322C4 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Pulsed laser deposition of pure and Pr doped Ge-Ga-Se amourphous chalcogenide films.

Popis výsledku v původním jazyce

Pure and praseodymium-doped thin films of Ge30Ga5Se65 amorphous system were prepared by the pulsed laser deposition (PLD) technique. The composition of the prepared films was close to the composition of the used targets of bulk chalcogenide glass. The structure of the prepared films was also close to that of the targets as shown by the Raman spectra, The annealing of films shifted the position of the absorption edge to higher energies, which is explained by chemical homogenization of the films due to interaction of fragments of the evaporated material. Two luminescence bands near 1340 and 1610 nm were observed in the emission spectra of praseodymium-doped Ge-Ga-Se thin films.

Název v anglickém jazyce

Pulsed laser deposition of pure and Pr doped Ge-Ga-Se amourphous chalcogenide films.

Popis výsledku anglicky

Pure and praseodymium-doped thin films of Ge30Ga5Se65 amorphous system were prepared by the pulsed laser deposition (PLD) technique. The composition of the prepared films was close to the composition of the used targets of bulk chalcogenide glass. The structure of the prepared films was also close to that of the targets as shown by the Raman spectra, The annealing of films shifted the position of the absorption edge to higher energies, which is explained by chemical homogenization of the films due to interaction of fragments of the evaporated material. Two luminescence bands near 1340 and 1610 nm were observed in the emission spectra of praseodymium-doped Ge-Ga-Se thin films.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/ME%20322" target="_blank" >ME 322: Studium luminiscenčních vlastností tenkých vrstev pro realizaci mikrolaseru</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2000

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Optical Materials

ISSN

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e-ISSN

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Svazek periodika

15

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

191-197

Kód UT WoS článku

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EID výsledku v databázi Scopus

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