Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00324998" target="_blank" >RIV/68378271:_____/09:00324998 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy

Popis výsledku v původním jazyce

We present the results of optical pump - terahertz probe experiments applied to a set of thin film microcrystalline silicon samples, with structures varying from amorphous to fully microcrystalline. The samples were excited at wavelengths 800 and 400 nmand studied at temperatures down to 20 K. The character of nanoscopic electrical transport properties markedly change on a sub-picosecond time scale. The initial transient photoconductivity of the samples is dominated by hot free carriers with a mobilityof 70 cm2/Vs. These carriers are rapidly (within 0.6 ps) trapped into weakly localized hopping states. The hopping process dominates the THz spectra on the picosecond and sub-ns time scales. The saturated high-frequency value of the hopping mobility islimited by the sample disorder in the amorphous sample and by electron-phonon interaction for microcrystalline samples.

Název v anglickém jazyce

Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy

Popis výsledku anglicky

We present the results of optical pump - terahertz probe experiments applied to a set of thin film microcrystalline silicon samples, with structures varying from amorphous to fully microcrystalline. The samples were excited at wavelengths 800 and 400 nmand studied at temperatures down to 20 K. The character of nanoscopic electrical transport properties markedly change on a sub-picosecond time scale. The initial transient photoconductivity of the samples is dominated by hot free carriers with a mobilityof 70 cm2/Vs. These carriers are rapidly (within 0.6 ps) trapped into weakly localized hopping states. The hopping process dominates the THz spectra on the picosecond and sub-ns time scales. The saturated high-frequency value of the hopping mobility islimited by the sample disorder in the amorphous sample and by electron-phonon interaction for microcrystalline samples.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review. B

ISSN

1098-0121

e-ISSN

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Svazek periodika

79

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

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Kód UT WoS článku

000264768900088

EID výsledku v databázi Scopus

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