Power-law photoluminescence decay in indirect gap quantum dots

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00395142" target="_blank" >RIV/68378271:_____/13:00395142 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389013:_____/13:00395142

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.mee.2013.03.139" target="_blank" >http://dx.doi.org/10.1016/j.mee.2013.03.139</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mee.2013.03.139" target="_blank" >10.1016/j.mee.2013.03.139</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Power-law photoluminescence decay in indirect gap quantum dots

Popis výsledku v původním jazyce

In a certain contrast to the standard expectation, according to which the photoluminescence intensity decay in quantum dots could have the mathematical form of exponential function, some experiments indicate a slower type of the intensity decay development, namely in the form of the power-law functional dependence. We are presenting a theoretical interpretation of this phenomenon based on the electron?phonon interaction taken into account in an approximation going beyond the limits of the perturbation theory. We use a simple though quite realistic model of two electronic bound states representing the basic features of the electron in the conduction band states of the InAs small quantum dot. Within this model, the photoluminescence intensity is connected with the electronic level occupation up-conversion process. The electron?phonon coupling is taken into account with the help of the quantum kinetic equations developed with the nonequilibrium Green?s functions.

Název v anglickém jazyce

Power-law photoluminescence decay in indirect gap quantum dots

Popis výsledku anglicky

In a certain contrast to the standard expectation, according to which the photoluminescence intensity decay in quantum dots could have the mathematical form of exponential function, some experiments indicate a slower type of the intensity decay development, namely in the form of the power-law functional dependence. We are presenting a theoretical interpretation of this phenomenon based on the electron?phonon interaction taken into account in an approximation going beyond the limits of the perturbation theory. We use a simple though quite realistic model of two electronic bound states representing the basic features of the electron in the conduction band states of the InAs small quantum dot. Within this model, the photoluminescence intensity is connected with the electronic level occupation up-conversion process. The electron?phonon coupling is taken into account with the help of the quantum kinetic equations developed with the nonequilibrium Green?s functions.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BE - Teoretická fyzika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microelectronic Engineering

ISSN

0167-9317

e-ISSN

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Svazek periodika

111

Číslo periodika v rámci svazku

November

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

170-174

Kód UT WoS článku

000322751300033

EID výsledku v databázi Scopus

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