Surface structure and electronic states of epitaxial ?-FeSi2(100)/Si(001) thin films: Combined quantitative LEED, ab initio DFT, and STM study

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00436120" target="_blank" >RIV/68378271:_____/14:00436120 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.90.155305" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.90.155305</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.90.155305" target="_blank" >10.1103/PhysRevB.90.155305</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface structure and electronic states of epitaxial ?-FeSi2(100)/Si(001) thin films: Combined quantitative LEED, ab initio DFT, and STM study

Popis výsledku v původním jazyce

The surface structure of epitaxial ?-FeSi2(100) thin film grown on Si(001) was analyzed using the quantitative low-energy electron diffraction intensity-voltage (LEED I-V) method, ab initio density functional theory (DFT) calculations, and scanning tunneling microscopy (STM). The iron-silicide film truncation and atomic surface structure were determined by LEED I-V method. Significant atomic relaxations within the topmost surface layers were revealed by the LEED I-V method and confirmed by DFT. The simulated STM patterns from the best-fit model agree well with the measured STM images on the ?-FeSi2(100)/Si(001)-p(2 2) surface. Electronic band structure analysis of the bulk and epitaxial ?-FeSi2(100) was carried out. Surface electronic states were identified by a partial k-resolved atomic-orbital based local density-of-state analysis.

Název v anglickém jazyce

Surface structure and electronic states of epitaxial ?-FeSi2(100)/Si(001) thin films: Combined quantitative LEED, ab initio DFT, and STM study

Popis výsledku anglicky

The surface structure of epitaxial ?-FeSi2(100) thin film grown on Si(001) was analyzed using the quantitative low-energy electron diffraction intensity-voltage (LEED I-V) method, ab initio density functional theory (DFT) calculations, and scanning tunneling microscopy (STM). The iron-silicide film truncation and atomic surface structure were determined by LEED I-V method. Significant atomic relaxations within the topmost surface layers were revealed by the LEED I-V method and confirmed by DFT. The simulated STM patterns from the best-fit model agree well with the measured STM images on the ?-FeSi2(100)/Si(001)-p(2 2) surface. Electronic band structure analysis of the bulk and epitaxial ?-FeSi2(100) was carried out. Surface electronic states were identified by a partial k-resolved atomic-orbital based local density-of-state analysis.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review. B

ISSN

1098-0121

e-ISSN

—

Svazek periodika

90

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

"155305-1"-"155305-9"

Kód UT WoS článku

000343771700002

EID výsledku v databázi Scopus

—