Origin of slow low-temperature luminescence in undoped and Ce-doped Y2SiO5 and Lu2SiO5 single crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00449045" target="_blank" >RIV/68378271:_____/15:00449045 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/pssb.201451234" target="_blank" >http://dx.doi.org/10.1002/pssb.201451234</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201451234" target="_blank" >10.1002/pssb.201451234</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Origin of slow low-temperature luminescence in undoped and Ce-doped Y2SiO5 and Lu2SiO5 single crystals

Popis výsledku v původním jazyce

At 4.2?300 K, the steady-state and time-resolved emission and excitation spectra as well as the luminescence decay kinetics in the 10 ms?10 us time range are studied for the undoped and Ce3+-doped single crystals of Y2SiO5 and Lu2SiO5. At low temperatures, a broad intrinsic emission band located at 2.55 eV in Y2SiO5 and 2.58 eV in Lu2SiO5 is observed in the luminescence spectra of all the crystals studied under excitation in the charge-transfer absorption region (with Eexc > 4.2 eV). This emission reveals the slow non-exponential decay kinetics characteristic for tunneling recombination processes. In the slow decay kinetics of the low-temperature luminescence of Ce3+-doped crystals, both the multi-exponential and the non exponential decay stages are detected. The origin of the defects, responsible for the undesirable slow low-temperature luminescence of the undoped and Ce3+-doped Y2SiO5 and Lu2SiO5 crystals is considered.

Název v anglickém jazyce

Origin of slow low-temperature luminescence in undoped and Ce-doped Y2SiO5 and Lu2SiO5 single crystals

Popis výsledku anglicky

At 4.2?300 K, the steady-state and time-resolved emission and excitation spectra as well as the luminescence decay kinetics in the 10 ms?10 us time range are studied for the undoped and Ce3+-doped single crystals of Y2SiO5 and Lu2SiO5. At low temperatures, a broad intrinsic emission band located at 2.55 eV in Y2SiO5 and 2.58 eV in Lu2SiO5 is observed in the luminescence spectra of all the crystals studied under excitation in the charge-transfer absorption region (with Eexc > 4.2 eV). This emission reveals the slow non-exponential decay kinetics characteristic for tunneling recombination processes. In the slow decay kinetics of the low-temperature luminescence of Ce3+-doped crystals, both the multi-exponential and the non exponential decay stages are detected. The origin of the defects, responsible for the undesirable slow low-temperature luminescence of the undoped and Ce3+-doped Y2SiO5 and Lu2SiO5 crystals is considered.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP204%2F12%2F0805" target="_blank" >GAP204/12/0805: Pokročilá materiálová řešení pro tenkovrstvé scintilátory a transformátory světla</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

—

Svazek periodika

252

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

274-281

Kód UT WoS článku

000351159700004

EID výsledku v databázi Scopus

2-s2.0-84931084129