ESR and TSL study of hole and electron traps in LuAG:Ce,Mg ceramic scintillator

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455257" target="_blank" >RIV/68378271:_____/15:00455257 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.optmat.2015.03.049" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2015.03.049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2015.03.049" target="_blank" >10.1016/j.optmat.2015.03.049</a>

Jazyk výsledku

angličtina

Název v původním jazyce

ESR and TSL study of hole and electron traps in LuAG:Ce,Mg ceramic scintillator

Popis výsledku v původním jazyce

The process of hole and electron localization in LuAG:Ce,Mg ceramics is studied by electron spin resonance (ESR) and thermally stimulated luminescence (TSL). Hole traps, which are created by UV irradiation, are detected in the form of O- centers. Mg-perturbed variants of O- centers are proposed to exist. The thermal stability of such defects is studied, proving that they are stable up to room temperature. The interaction between O- centers and shallow electron traps is studied by thermally stimulated luminescence (TSL) and phosphorescence experiments, which reveal the occurrence of an a-thermal tunneling process between trapped electrons and randomly distributed Ce centers. By correlating the TSL-derived trap parameters and temperature dependent ESR intensities, it is found that O- centers compete with Ce centers in free electron capture.

Název v anglickém jazyce

ESR and TSL study of hole and electron traps in LuAG:Ce,Mg ceramic scintillator

Popis výsledku anglicky

The process of hole and electron localization in LuAG:Ce,Mg ceramics is studied by electron spin resonance (ESR) and thermally stimulated luminescence (TSL). Hole traps, which are created by UV irradiation, are detected in the form of O- centers. Mg-perturbed variants of O- centers are proposed to exist. The thermal stability of such defects is studied, proving that they are stable up to room temperature. The interaction between O- centers and shallow electron traps is studied by thermally stimulated luminescence (TSL) and phosphorescence experiments, which reveal the occurrence of an a-thermal tunneling process between trapped electrons and randomly distributed Ce centers. By correlating the TSL-derived trap parameters and temperature dependent ESR intensities, it is found that O- centers compete with Ce centers in free electron capture.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP204%2F12%2F0805" target="_blank" >GAP204/12/0805: Pokročilá materiálová řešení pro tenkovrstvé scintilátory a transformátory světla</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials

ISSN

0925-3467

e-ISSN

—

Svazek periodika

45

Číslo periodika v rámci svazku

Jul

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

252-257

Kód UT WoS článku

000353857700042

EID výsledku v databázi Scopus

2-s2.0-84927974018