Electronic and transport properties of the Mn-doped topological insulator Bi2Te3: a first-principles study

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00465535" target="_blank" >RIV/68378271:_____/16:00465535 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/16:10324597

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.93.214409" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.93.214409</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.93.214409" target="_blank" >10.1103/PhysRevB.93.214409</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronic and transport properties of the Mn-doped topological insulator Bi2Te3: a first-principles study

Popis výsledku v původním jazyce

We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi2Te3 doped with Mn atoms in substitutional MnBi and interstitial positions Mni, which act as acceptors and donors, respectively. The effect of native BiTe- and TeBi-antisite defects and their influence on electronic transport properties is also investigated. We have studied (i) Bi2Te3 with and without native defects, (ii) MnBi defects with and without native defects, (iii) the same, but for Mni defects, and (iv) the combined presence of MnBi and Mni. The resistivity is strongly influenced by the amount of carriers, their type, and by the relative positions of the Mn-impurity energy levels and the Fermi energy. Our results suggest strategies to tune bulk resistivities and also clarify the location of Mn atoms in samples.n

Název v anglickém jazyce

Electronic and transport properties of the Mn-doped topological insulator Bi2Te3: a first-principles study

Popis výsledku anglicky

We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi2Te3 doped with Mn atoms in substitutional MnBi and interstitial positions Mni, which act as acceptors and donors, respectively. The effect of native BiTe- and TeBi-antisite defects and their influence on electronic transport properties is also investigated. We have studied (i) Bi2Te3 with and without native defects, (ii) MnBi defects with and without native defects, (iii) the same, but for Mni defects, and (iv) the combined presence of MnBi and Mni. The resistivity is strongly influenced by the amount of carriers, their type, and by the relative positions of the Mn-impurity energy levels and the Fermi energy. Our results suggest strategies to tune bulk resistivities and also clarify the location of Mn atoms in samples.n

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA14-30062S" target="_blank" >GA14-30062S: Stavy topologických izolátorů vázané se spinovými stupni volnosti</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

2469-9950

e-ISSN

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Svazek periodika

93

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

—

Kód UT WoS článku

000377299100003

EID výsledku v databázi Scopus

2-s2.0-84975082463